Rapid thermal annealing of neutron transmutation doped silicon E. M. LawsonP. J. Lee OriginalPaper Pages: 1 - 5
Metal-silicon reaction rates—the effects of capping Victor G. WeizerNavid S. Fatemi OriginalPaper Pages: 7 - 13
MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine Sarah R. KurtzJ. M. OlsonA. Kibbler OriginalPaper Pages: 15 - 18
Determination of axisymmetric elastic constants in anisotropic silicon for a thyristor tablet Thomas Lackner OriginalPaper Pages: 19 - 24
On the growth of gallium phosphide layers on gallium phosphide substrates by MOVPE M. R. LeysM. E. PistolL. Samuelson OriginalPaper Pages: 25 - 31
Formation of schottky barriers on GaAs(110): from adsorbate-lnduced gap states to interface metallicity A. KahnK. StilesG. Margaritondo OriginalPaper Pages: 33 - 37
Compositional disordering and the formation of semi-insulating layers in AlAs-GaAs superlattices by MeV oxygen implantation R. P. BryanM. E. GivensJ. J. Coleman OriginalPaper Pages: 39 - 44
A study of the OMVPE growth mechanisms using internal reflectance spectroscopy to examine adsorption of TMGa and NH3 and surface reactions between them A. TripathiD. MazzareseK. A. Jones OriginalPaper Pages: 45 - 51
Growth and properties of high-quality very-thin SOS films D. J. DuminS. DabralD. Novotny OriginalPaper Pages: 53 - 57
Influence of deep states on CdTe and GaAs metal interface formation J. L. ShawR. E. ViturroD. Lagraffe OriginalPaper Pages: 59 - 64
Rapid thermal annealing of dual Si and P implants in InP Ananth DodabalapurB. G. Streetman OriginalPaper Pages: 65 - 68
Metallurgical comparison of Au and Au:An:Au contacts on InGaAs, InGaAsP layers A. AppelbaumP. M. Thomas OriginalPaper Pages: 69 - 77
Density determination of silver neodecanoate, tungsten hexacarbonyl, and a series of metal acetylacetonates and hexafluoroacetylacetonates S. PostonA. Reisman OriginalPaper Pages: 79 - 84
The influence of dose and protecting mask on electrically active defects induced by ion implantation in silicon B. RemakiJ. J. MarchandB. Balland OriginalPaper Pages: 85 - 90
Phosphorus incorporation in GaAsP grown by remote-plasma MOCVD Alan D. HuelsmanR. Reif OriginalPaper Pages: 91 - 94
Final announcement and call for papers Second International Conference on Solid State and Integrated Circuit Technology October 22–28, 1989/Beijing, China Pages: 95 - 95