Growth and properties of Hg1-xCdxTe on GaAs, with x − 0.27 V. NatarajanN. R. TaskarS. K. Ghandhi OriginalPaper Pages: 479 - 483
Characteristics of Pd-doped tin oxide ceramics in response to CO gas Bi-Shiou ChiouJeng-Jen LiJeng-Gong Duh OriginalPaper Pages: 485 - 492
An experimental and theoretical study of growth in horizontal epitaxial reactors Percy B. ChinoyPaul D. AgnelloSorab K. Ghandhi OriginalPaper Pages: 493 - 499
Structural and electrical contact properties of LPE grown GaAs doped with indium J. F. ChenC. R. Wie OriginalPaper Pages: 501 - 507
A study of aluminum oxide thin films prepared by atmospheric-pressure chemical vapor deposition from trimethylaluminum + oxygen and/or nitrous oxide Kenneth Michael GustinRoy Gerald Gordon OriginalPaper Pages: 509 - 517
The diffusion of ion-implanted arsenic in thermally grown SiO2 Yosi Shacham-DiamondWilliam G. OldhamReza Kazerounian OriginalPaper Pages: 519 - 525
Spatial localization and diffusion of atomic silicon in delta-doped GaAs E. F. SchubertT. H. ChiuJ. B. Stark OriginalPaper Pages: 527 - 531
A theoretical model of the formation morphologies of porous silicon R. L. SmithS. -F. ChuangS. D. Collins OriginalPaper Pages: 533 - 541