Volume 17, Issue 6 | Journal of Electronic Materials

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Volume 17, Issue 6

November 1988

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8 articles in this issue

Growth and properties of Hg_1-xCd_xTe on GaAs, with x − 0.27
V. Natarajan
N. R. Taskar
S. K. Ghandhi
OriginalPaper Pages: 479 - 483
Characteristics of Pd-doped tin oxide ceramics in response to CO gas
Bi-Shiou Chiou
Jeng-Jen Li
Jeng-Gong Duh
OriginalPaper Pages: 485 - 492
An experimental and theoretical study of growth in horizontal epitaxial reactors
Percy B. Chinoy
Paul D. Agnello
Sorab K. Ghandhi
OriginalPaper Pages: 493 - 499
Structural and electrical contact properties of LPE grown GaAs doped with indium
J. F. Chen
C. R. Wie
OriginalPaper Pages: 501 - 507
A study of aluminum oxide thin films prepared by atmospheric-pressure chemical vapor deposition from trimethylaluminum + oxygen and/or nitrous oxide
Kenneth Michael Gustin
Roy Gerald Gordon
OriginalPaper Pages: 509 - 517
The diffusion of ion-implanted arsenic in thermally grown SiO₂
Yosi Shacham-Diamond
William G. Oldham
Reza Kazerounian
OriginalPaper Pages: 519 - 525
Spatial localization and diffusion of atomic silicon in delta-doped GaAs
E. F. Schubert
T. H. Chiu
J. B. Stark
OriginalPaper Pages: 527 - 531
A theoretical model of the formation morphologies of porous silicon
R. L. Smith
S. -F. Chuang
S. D. Collins
OriginalPaper Pages: 533 - 541