A comparison of the bulk resistivity as a function of composition for some group lVA-boron and -silicon systems C. Y. TayI. R. HarrisS. J. Wright OriginalPaper Pages: 107 - 110
Determination of donor and acceptor impurity concentrations in n-InP and n-GaAs M. BenzaquenK. MazurukC. Miner OriginalPaper Pages: 111 - 117
Dislocation and stacking fault interactions in silicon Douglas R. Sparks OriginalPaper Pages: 119 - 122
Ohmic contacts to zinc telluride and their high temperature behavior M. M. LuqmanW. D. BrownH. S. Hajghassem OriginalPaper Pages: 123 - 126
Semi-insulating InP grown by low pressure MOCVD K. L. HessS. W. ZehrD. Perrachione OriginalPaper Pages: 127 - 131
Formation of nickel-manganese oxide thermistors studied by XRD, SEM and auger spectroscopy S. Azimi-NamF. Golestani-FardT. Hashemi OriginalPaper Pages: 133 - 137