Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP M. SchillingG. SchemmelF. J. Tegude OriginalPaper Pages: 259 - 262
Redistribution of implanted chlorine in SiO2 films on silicon during subsequent oxidation Y. -D. SheuS. R. ButlerC. W. Magee OriginalPaper Pages: 263 - 266
Particulates: A direct origin of oval defects in GaAs layers grown by molecular beam epitaxy Shang-Lin WengC. WebbS. G. Bandy OriginalPaper Pages: 267 - 271
Electromigration and microstructural properties of AI-Si/Ti/AI-Si VLSI metallization C. F. DunnF. R. BrotzenJ. W. Mcpherson OriginalPaper Pages: 273 - 277
Structural and electrical properties of polycrystalline silicon films deposited by low pressure chemical vapor deposition with and without plasma enhancement J. -J. HajjarR. ReifD. Adler OriginalPaper Pages: 279 - 285
The use of secondary ion mass spectrometry in the study of matrix atom diffusion in epitaxial CdTe M. G. AstlesG. Blackmore OriginalPaper Pages: 287 - 290
28th Annual Electronic Materials Conference June 25–27, 1986 University of Massachusetts at Amhurst, MA Legacy Pages: 291 - 322