1. H₂Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)

   • C. R. Lewis
   • M. J. Ludowise
   • W. T. Dietze

   OriginalPaper Pages: 447 - 461

2. Photoluminescence identification of the C and Be acceptor levels in InP

   • B. J. Skromme
   • G. E. Stillman
   • S. S. Chan

   OriginalPaper Pages: 463 - 491

3. Lead-europium-selenide-telluride grown by molecular beam epitaxy

   • D. L. Partin

   OriginalPaper Pages: 493 - 504

4. Nitridation of silicon in a multiwafer plasma system

   • A. Reisman
   • M. Berkenblit
   • C. J. Merz

   OriginalPaper Pages: 505 - 521

5. Analysis of complex equilibria in the Ge-Se-I vapor transport system saturated with GeSe(g)

   • Y. K. Rao
   • M. Donley
   • H. G. Lee

   OriginalPaper Pages: 523 - 542

6. Modulation of electronic properties in liquid phase epitaxially grown p-n-p-n GaAs multilayers

   • P. Zwicknagl
   • W. Rehm
   • E. Bauser

   OriginalPaper Pages: 545 - 558

7. Rapid thermal redistribution of copper impurities in GaAs_xP_1-x at temperatures above 250 °C

   • Werner Schairer

   OriginalPaper Pages: 559 - 574

8. Electrophotographic characteristics of CdS binder layers after heat and light treatment effects

   • K. M. Kolentsov
   • N. A. Balchev

   OriginalPaper Pages: 575 - 591

9. A novel low-temperature method of SiO₂ film deposition forMOSFET applications

   • K. P. Pande
   • P. W. Davies

   OriginalPaper Pages: 593 - 602

10. Metalorganic InP and In_x Ga_1-x, As_y P_1-y, on InP epitaxy at atmospheric pressure

    • A. Mircea
    • R. Azoulay
    • M. Sacilotti

    OriginalPaper Pages: 603 - 620