Solid state nucleation in the Ti-Si ultrathin film system R. W. BenéH. Y. Yang OriginalPaper Pages: 1 - 10
Some investigations on photovoltaic mechanism in silicon ribbon T. KatoH. MoritaA. Onoe OriginalPaper Pages: 11 - 28
Topography induced preferential crystallization of thermally grown silicon dioxide films Julian ChengRoss A. Lemons OriginalPaper Pages: 61 - 69
Electrical and photoluminescence properties of Ge-doped n-type GaAs Grown by molecular beam epitaxy Ai-zhen LiShang-heng XinA. G. Milnes OriginalPaper Pages: 71 - 91
The nature of prismatic dislocation loops in undoped InP G. T. BrownB. CockayneW. R. MacEwan OriginalPaper Pages: 93 - 106
The influence of dielectric layers on the CW-Laser Annealing of polysilicon W. M. PaulsonS. R. Wilson OriginalPaper Pages: 107 - 124
Extremely reproducible zinc diffusion into InSb and its application to infrared detector array K. NishitaniK. NagahamaT. Murotani OriginalPaper Pages: 125 - 141
Comparison of polysilicon films annealed with a CW or pulsed laser S. R. WilsonW. M. PaulsonC. W. White OriginalPaper Pages: 143 - 159
Analysis of morphologically stable horizontal ribbon crystal growth M. E. GlicksmanP. W. Voorhees OriginalPaper Pages: 161 - 179
Mos and schottky diode gas sensors using transition metal electrodes T. L. PoteatB. LalevicM. Chen OriginalPaper Pages: 181 - 214
Investigations on low temperature mo-cvd growth of GaAs H. KräutleH. RoehleH. Beneking OriginalPaper Pages: 215 - 222
Study of grown-in deep-level defects vs growth parameters in GaAs grown by VPE technique Sheng S. LiW. L. WangC. W. Litton OriginalPaper Pages: 223 - 234