Endurance and retention of mnos devices over the temperature range from −50°c to +125°c R. V. JonesW. D. Brown OriginalPaper Pages: 959 - 972
Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere M. FengV. EuW. B. Henderson OriginalPaper Pages: 973 - 986
Growth and impurity characterisation ofblue crystals of cuals2 E. GuerreroV. SagredoJ. S. Shah OriginalPaper Pages: 987 - 998
Hydrogen insertion compounds of transition metal oxides P. G. DickensS. J. HibbleR. H. Jarman OriginalPaper Pages: 999 - 1009
Dependence of electrical properties of polycrystalline cvd si films on grain size and impurity doping concentrationa,b Jane J. YangWilliam I. SimpsonRalph P. Ruth OriginalPaper Pages: 1011 - 1050
The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE M. J. LudowiseC. B. CooperR. R. Saxena OriginalPaper Pages: 1051 - 1068
Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutions T. C. Harman OriginalPaper Pages: 1069 - 1084
Si-defect concentrations in heavily Si-DOPED GaAs: annealing-Induced changes-II R. T. ChenW. G. Spitzer OriginalPaper Pages: 1085 - 1129
The pseudobinary HgTe-CdTe phase diagram F. R. SzofranS. L. Lehoczky OriginalPaper Pages: 1131 - 1150