Volume 10, Issue 2 | Journal of Electronic Materials

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Volume 10, Issue 2

March 1981

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7 articles in this issue

Electrical properties of indium-doped LPE layers of Pb_1−xSn_x Te
A. Zemel
D. Eger
N. Tamari
OriginalPaper Pages: 301 - 312
Molecular beam epitaxial growth and characterization of lead telluride for laser diodes
Dale L. Partin
OriginalPaper Pages: 313 - 325
Are pyrolyzed polyimides conducting polymers?
J. I. Gittleman
E. K. Sichel
OriginalPaper Pages: 327 - 336
Pit formations at AL/(100)Si contact windows
S. Vaidya
OriginalPaper Pages: 337 - 346
Quantitative esr analysis of deep defects in LEC-grown GaP
U. Kaufmann
T. A. Kennedy
OriginalPaper Pages: 347 - 360
Minority carrier traps in epitaxial gallium arsenide phosphide
I. D. Henning
H. Thomas
OriginalPaper Pages: 361 - 377
Liquid phase epitaxial growth and characterization of InAs_xSb_1−;x AND In_1−yGa_ySb ON (111)B InSb substrates
J. K. Abrokwah
M. Gershenzon
OriginalPaper Pages: 379 - 421