Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions I. E. TyschenkoM. VoelskowV. P. Popov NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 05 April 2021 Pages: 289 - 295
Evolution of Electron Transport under Resistive Switching in Porphyrazine Films K. A. DrozdovI. V. KrylovD. R. Khokhlov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 05 April 2021 Pages: 296 - 300
Impact of an External Magnetic Field on Solitary Waves in Quantum Electron–Hole Plasmas of Semiconductors S. MalekH. Hakimi Pajouh ELECTRONIC PROPERTIES OF SEMICONDUCTORS 05 April 2021 Pages: 301 - 307
Structural Features of Textured Zinc-Oxide Films Obtained by the Ion-Beam Sputtering Method V. G. KostishinA. Yu. MironovichA. A. Sergienko SURFACES, INTERFACES, AND THIN FILMS 05 April 2021 Pages: 308 - 314
Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots V. F. KabanovA. I. MikhailovM. V. Gavrikov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 05 April 2021 Pages: 315 - 318
Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law M. L. OrlovL. K. Orlov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 05 April 2021 Pages: 319 - 327
On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium I. D. BreevV. D. YakovlevaA. N. Anisimov MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 05 April 2021 Pages: 328 - 332
Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots Yu. M. ShernyakovN. Yu. GordeevA. E. Zhukov PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 333 - 340
Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation V. M. KalyginaA. V. TsymbalovYu. S. Petrova PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 341 - 345
Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures A. V. AlmaevV. I. NikolaevB. O. Kushnarev PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 346 - 353
Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction A. A. SemakovaV. V. RomanovK. D. Moiseev PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 354 - 358
TlGaN Quantum-Dot Photodetectors A. G. Al-ShatraviH. HassanA. H. Al-Khursan PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 359 - 362
Deposition of CZTS|ZnO Hetero-Junction Using SILAR and Spray Pyrolysis R. JayakrishnanA. RajV. G. Nair PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 363 - 372
Modeling and Simulation of High-Efficiency Eco-Friendly Perovskite-CZTSe1 – xSx Solar Cell D. JalalianA. GhadimiA. K. Sar Kaleh PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 373 - 378
Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs F. JabliS. DhouibiM. Gassoumi PHYSICS OF SEMICONDUCTOR DEVICES 05 April 2021 Pages: 379 - 383
Electrodeposition of Metals on p-Si from Aqueous Electrolytes V. N. GoriaevaR. A. Bisengaliev FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 05 April 2021 Pages: 384 - 386
High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage X.-M. ZhangC.-L. YanB.-S. Zhang FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 05 April 2021 Pages: 387 - 393
Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures A. M. Strel’chukA. A. LebedevP. V. Bulat Erratum 05 April 2021 Pages: 394 - 394