1. Effect of a Nickel Impurity on the Galvanomagnetic Properties and Electronic Structure of PbTe

   • E. P. Skipetrov
   • B. B. Kovalev
   • V. E. Slynko

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 09 October 2020 Pages: 1171 - 1179

   

2. Features of the Electrical-Conductivity Mechanism in γ-Irradiated TlInSe₂ Single Crystals under Hydrostatic Pressure

   • R. S. Madatov
   • Sh. G. Gasimov
   • S. H. Jabarov

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 09 October 2020 Pages: 1180 - 1184

   

3. Elastic and Thermal Properties of Orthorhombic and Tetragonal Phases of Cu₂ZnSiSe₄ by First Principles Calculations

   • Yan Li Gao
   • Wen Shui Guan
   • Yu Jing Dong

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 09 October 2020 Pages: 1185 - 1190

   

4. Structure and Photoelectric Properties of PbSe Films Deposited in the Presence of Ascorbic Acid

   • L. N. Maskaeva
   • V. M. Yurk
   • O. A. Lipina

   SURFACES, INTERFACES, AND THIN FILMS 09 October 2020 Pages: 1191 - 1197

   

5. Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

   • O. S. Komkov
   • S. A. Khakhulin
   • S. V. Sorokin

   SURFACES, INTERFACES, AND THIN FILMS 09 October 2020 Pages: 1198 - 1204

   

6. Electron-Population Bragg Grating Induced in an Al_xGa_{1 –x}As–GaAs–Al_xGa_{1 –x}As Heterostructure by Intrinsic Stimulated Picosecond Emission

   • N. N. Ageeva
   • I. L. Bronevoi
   • A. N. Krivonosov

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 09 October 2020 Pages: 1205 - 1214

   

7. Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation

   • O. V. Aleksandrov

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 09 October 2020 Pages: 1215 - 1219

   

8. Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature

   • O. F. Farhat
   • M. Hisham
   • Nyan J. Mohammed

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 09 October 2020 Pages: 1220 - 1223

   

9. Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga₂O₃

   • V. M. Kalygina
   • V. I. Nikolaev
   • P. N. Butenko

   MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1224 - 1229

   

10. Structure, Optical, and Photoelectric Properties of Lead-Sulfide Films Doped with Strontium and Barium

    • L. N. Maskaeva
    • E. V. Mostovshchikova
    • V. F. Markov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1230 - 1240

    

11. Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor

    • A. I. Isayev
    • H. I. Mammadova
    • R. I. Alekberov

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1241 - 1246

    

12. Spontaneous and Stimulated Emission in Thin Films of Cu(In_{1 –x}Ga_x)(S_ySe_{1 –y})₂ Solid Solutions in the Сomposition of Solar Cells

    • I. E. Svitsiankou
    • V. N. Pavlovskii
    • S. O. Kognovitckii

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1247 - 1253

    

13. External Quantum Efficiency of Bifacial HIT Solar Cells

    • A. V. Ermachikhin
    • Yu. V. Vorobyov
    • V. G. Litvinov

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1254 - 1259

    

14. Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures

    • M. M. Sobolev
    • F. Y. Soldatenkov

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1260 - 1266

    

15. Comparative Analysis of the Optical and Physical Properties of InAs and In_0.8Ga_0.2As Quantum Dots and Solar Cells Based on them

    • R. A. Salii
    • S. A. Mintairov
    • N. A. Kalyuzhnyy

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1267 - 1275

    

16. 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy

    • S. A. Blokhin
    • S. N. Nevedomsky
    • V. M. Ustinov

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1276 - 1283

    

17. Analysis of the Temperature Dependence of Diode Ideality Factor in InGaN-Based UV-A Light-Emitting Diode

    • P. Dalapati
    • N. B. Manik
    • A. N. Basu

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1284 - 1289

    

18. Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO₂|La₂O₃|HfO₂ (HLH) Sandwich Gate Dielectrics

    • L. Ramesh
    • S. Moparthi
    • G. K. Saramekala

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1290 - 1295

    

19. Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS

    • M. Gassoumi

    PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1296 - 1303

    

20. Physicochemical Interactions in the GeSb₂Te₄–PbSb₂Te₄ System

    • G. R. Gurbanov
    • M. B. Adygezalova

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 09 October 2020 Pages: 1304 - 1309

    

21. Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures

    • L. K. Markov
    • I. P. Smirnova
    • A. S. Pavluchenko

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 09 October 2020 Pages: 1310 - 1314

    

22. Electrical and Photoelectric Properties of α-Si/SiO₂ and α-Ge/SiO₂ Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures

    • O. M. Sreseli
    • M. A. Elistratova
    • A. V. Ershov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 09 October 2020 Pages: 1315 - 1319

    

23. Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains

    • N. V. Sibirev
    • Yu. S. Berdnikov
    • V. N. Sibirev

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1320 - 1324

    

24. Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

    • A. E. Klimov
    • A. N. Akimov
    • V.S. Epov

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1325 - 1331

    

25. Growth of a Ge Layer on a Si/SiO₂/Si(100) Structure by the Hot Wire Chemical Vapor Deposition

    • A. A. Sushkov
    • D. A. Pavlov
    • E. A. Pitirimova

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1332 - 1335

    

26. Behavior of Lithium Donors in Bulk Single-Crystal Isotopically Pure ²⁸Si_{1 –x}⁷²Ge_x Alloys

    • A. A. Ezhevskii
    • P. G. Sennikov
    • N. V. Abrosimov

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1336 - 1340

    

27. Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells

    • M. V. Dorokhin
    • P. B. Demina
    • M. A. G. Balanta

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1341 - 1346

    

28. Relaxation of the Excited States of Arsenic in Strained Germanium

    • K. A. Kovalevsky
    • Yu. Yu. Choporova
    • V. N. Shastin

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1347 - 1351

    

29. Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

    • A. N. Yablonskiy
    • A. V. Novikov
    • Z. F. Krasilnik

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1352 - 1359

    

30. Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range

    • D. I. Dyukov
    • A. G. Fefelov
    • S. V. Obolensky

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1360 - 1364

    

31. Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

    • L. A. Kushkov
    • V.V. Utochkin
    • S. V. Morozov

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1365 - 1370

    

32. Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion

    • V. V. Utochkin
    • V. Ya. Aleshkin
    • S. V. Morozov

    XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1371 - 1375