1. Solubility of oxygen in CdS single crystals and their physicochemical properties

   • N. K. Morozova
   • A. A. Kanakhin
   • A. S. Shnitnikov

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 July 2016 Pages: 849 - 852

2. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

   • P. V. Seredin
   • A. V. Fedyukin
   • M. Rinke

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 July 2016 Pages: 853 - 859

3. Features of conductivity mechanisms in heavily doped compensated V_1–x Ti _x FeSb Semiconductor

   • V. A. Romaka
   • P. Rogl
   • A. M. Horyn

   Electronic Properties of Semiconductors 06 July 2016 Pages: 860 - 868

4. Effect of thallium doping on the mobility of electrons in Bi₂Se₃ and holes in Sb₂Te₃

   • A. A. Kudryashov
   • V. G. Kytin
   • A. Banerjee

   Electronic Properties of Semiconductors 06 July 2016 Pages: 869 - 875

5. Electron exchange between tin impurity U ^– centers in PbS _z Se_1–z alloys

   • A. V. Marchenko
   • E. I. Terukov
   • V. S. Kiselev

   Electronic Properties of Semiconductors 06 July 2016 Pages: 876 - 882

6. Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

   • P. A. Ivanov
   • A. S. Potapov
   • I. V. Grekhov

   Electronic Properties of Semiconductors 06 July 2016 Pages: 883 - 887

7. Effect of coulomb correlations on luminescence and absorption in compensated semiconductors

   • N. A. Bogoslovskiy
   • P. V. Petrov
   • K. D. Tsendin

   Spectroscopy, Interaction With Radiation 06 July 2016 Pages: 888 - 893

8. Local emission spectroscopy of surface micrograins in A^IIIB^V semiconductors

   • N. D. Zhukov
   • E. G. Gluhovskoy
   • D. S. Mosiyash

   Surfaces, Interfaces, and Thin Films 06 July 2016 Pages: 894 - 900

9. Indium nanowires at the silicon surface

   • A. S. Kozhukhov
   • D. V. Sheglov
   • A. V. Latyshev

   Surfaces, Interfaces, and Thin Films 06 July 2016 Pages: 901 - 903

10. Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields

    • Ya. V. Kuznetsova
    • V. N. Jmerik
    • M. V. Zamoryanskaya

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 904 - 909

11. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

    • V. V. Romanov
    • P. A. Dement’ev
    • K. D. Moiseev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 910 - 914

12. Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

    • Yu. B. Vasilyev
    • N. N. Mikhailov
    • V. I. Gavrilenko

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 915 - 919

13. Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

    • P. A. Ivanov
    • M. F. Kudoyarov
    • T. P. Samsonova

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 920 - 923

14. Study of deep levels in GaAs p–i–n structures

    • M. M. Sobolev
    • F. Yu. Soldatenkov
    • V. A. Kozlov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 924 - 928

15. Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium

    • A. N. Imenkov
    • E. A. Grebenshchikova
    • Yu. P. Yakovlev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 929 - 934

16. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    • G. K. Krivyakin
    • V. A. Volodin
    • J. Stuchlik

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 935 - 940

17. Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode

    • S. A. Fefelov
    • L. P. Kazakova
    • O. Yu. Prikhodko

    Amorphous, Vitreous, and Organic Semiconductors 06 July 2016 Pages: 941 - 946

18. Nonlinear optical response of planar and spherical CdSe nanocrystals

    • A. S. Selyukov
    • A. A. Isaev
    • R. B. Vasiliev

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 06 July 2016 Pages: 947 - 950

19. Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum

    • I. S. Kotousova
    • S. P. Lebedev
    • A. A. Lebedev

    Carbon Systems 06 July 2016 Pages: 951 - 956

20. Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors

    • A. S. Kyuregyan
    • A. V. Gorbatyuk
    • B. V. Ivanov

    Physics of Semiconductor Devices 06 July 2016 Pages: 957 - 962

21. Electrochemical lithiation of silicon with varied crystallographic orientation

    • E. V. Astrova
    • A. M. Rumyantsev
    • V. V. Zhdanov

    Physics of Semiconductor Devices 06 July 2016 Pages: 963 - 969

22. On current spreading in solar cells: a two-parameter tube model

    • M. A. Mintairov
    • V. V. Evstropov
    • N. A. Kalyuzhnyy

    Physics of Semiconductor Devices 06 July 2016 Pages: 970 - 975

23. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

    • Ya. A. Parkhomenko
    • P. A. Dement’ev
    • K. D. Moiseev

    Fabrication, Treatment, and Testing of Materials and Structures 06 July 2016 Pages: 976 - 979

24. Chloride epitaxy of β-Ga₂O₃ layers grown on c-sapphire substrates

    • V. I. Nikolaev
    • A. I. Pechnikov
    • D. A. Kirilenko

    Fabrication, Treatment, and Testing of Materials and Structures 06 July 2016 Pages: 980 - 983

25. Technique for forming ITO films with a controlled refractive index

    • L. K. Markov
    • I. P. Smirnova
    • S. I. Pavlov

    Fabrication, Treatment, and Testing of Materials and Structures 06 July 2016 Pages: 984 - 988