Volume 50, Issue 7

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July 2016

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25 articles in this issue

Solubility of oxygen in CdS single crystals and their physicochemical properties
N. K. Morozova
A. A. Kanakhin
A. S. Shnitnikov
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 July 2016 Pages: 849 - 852
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
P. V. Seredin
A. V. Fedyukin
M. Rinke
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 July 2016 Pages: 853 - 859
Features of conductivity mechanisms in heavily doped compensated V_1–xTi_xFeSb Semiconductor
V. A. Romaka
P. Rogl
A. M. Horyn
Electronic Properties of Semiconductors 06 July 2016 Pages: 860 - 868
Effect of thallium doping on the mobility of electrons in Bi₂Se₃ and holes in Sb₂Te₃
A. A. Kudryashov
V. G. Kytin
A. Banerjee
Electronic Properties of Semiconductors 06 July 2016 Pages: 869 - 875
Electron exchange between tin impurity U ^– centers in PbS_zSe_1–z alloys
A. V. Marchenko
E. I. Terukov
V. S. Kiselev
Electronic Properties of Semiconductors 06 July 2016 Pages: 876 - 882
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
P. A. Ivanov
A. S. Potapov
I. V. Grekhov
Electronic Properties of Semiconductors 06 July 2016 Pages: 883 - 887
Effect of coulomb correlations on luminescence and absorption in compensated semiconductors
N. A. Bogoslovskiy
P. V. Petrov
K. D. Tsendin
Spectroscopy, Interaction With Radiation 06 July 2016 Pages: 888 - 893
Local emission spectroscopy of surface micrograins in A^IIIB^V semiconductors
N. D. Zhukov
E. G. Gluhovskoy
D. S. Mosiyash
Surfaces, Interfaces, and Thin Films 06 July 2016 Pages: 894 - 900
Indium nanowires at the silicon surface
A. S. Kozhukhov
D. V. Sheglov
A. V. Latyshev
Surfaces, Interfaces, and Thin Films 06 July 2016 Pages: 901 - 903
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields
Ya. V. Kuznetsova
V. N. Jmerik
M. V. Zamoryanskaya
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 904 - 909
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
V. V. Romanov
P. A. Dement’ev
K. D. Moiseev
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 910 - 914
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
Yu. B. Vasilyev
N. N. Mikhailov
V. I. Gavrilenko
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 915 - 919
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films
P. A. Ivanov
M. F. Kudoyarov
T. P. Samsonova
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 920 - 923
Study of deep levels in GaAs p–i–n structures
M. M. Sobolev
F. Yu. Soldatenkov
V. A. Kozlov
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 924 - 928
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium
A. N. Imenkov
E. A. Grebenshchikova
Yu. P. Yakovlev
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 929 - 934
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
G. K. Krivyakin
V. A. Volodin
J. Stuchlik
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2016 Pages: 935 - 940
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
S. A. Fefelov
L. P. Kazakova
O. Yu. Prikhodko
Amorphous, Vitreous, and Organic Semiconductors 06 July 2016 Pages: 941 - 946
Nonlinear optical response of planar and spherical CdSe nanocrystals
A. S. Selyukov
A. A. Isaev
R. B. Vasiliev
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 06 July 2016 Pages: 947 - 950
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum
I. S. Kotousova
S. P. Lebedev
A. A. Lebedev
Carbon Systems 06 July 2016 Pages: 951 - 956
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
A. S. Kyuregyan
A. V. Gorbatyuk
B. V. Ivanov
Physics of Semiconductor Devices 06 July 2016 Pages: 957 - 962
Electrochemical lithiation of silicon with varied crystallographic orientation
E. V. Astrova
A. M. Rumyantsev
V. V. Zhdanov
Physics of Semiconductor Devices 06 July 2016 Pages: 963 - 969
On current spreading in solar cells: a two-parameter tube model
M. A. Mintairov
V. V. Evstropov
N. A. Kalyuzhnyy
Physics of Semiconductor Devices 06 July 2016 Pages: 970 - 975
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
Ya. A. Parkhomenko
P. A. Dement’ev
K. D. Moiseev
Fabrication, Treatment, and Testing of Materials and Structures 06 July 2016 Pages: 976 - 979
Chloride epitaxy of β-Ga₂O₃ layers grown on c-sapphire substrates
V. I. Nikolaev
A. I. Pechnikov
D. A. Kirilenko
Fabrication, Treatment, and Testing of Materials and Structures 06 July 2016 Pages: 980 - 983
Technique for forming ITO films with a controlled refractive index
L. K. Markov
I. P. Smirnova
S. I. Pavlov
Fabrication, Treatment, and Testing of Materials and Structures 06 July 2016 Pages: 984 - 988

Volume 50, Issue 7

Solubility of oxygen in CdS single crystals and their physicochemical properties

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

Features of conductivity mechanisms in heavily doped compensated V_1–xTi_xFeSb Semiconductor

Effect of thallium doping on the mobility of electrons in Bi₂Se₃ and holes in Sb₂Te₃

Electron exchange between tin impurity U ^– centers in PbS_zSe_1–z alloys

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

Effect of coulomb correlations on luminescence and absorption in compensated semiconductors

Local emission spectroscopy of surface micrograins in A^IIIB^V semiconductors

Indium nanowires at the silicon surface

Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

Study of deep levels in GaAs p–i–n structures

Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode

Nonlinear optical response of planar and spherical CdSe nanocrystals

Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum

Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors

Electrochemical lithiation of silicon with varied crystallographic orientation

On current spreading in solar cells: a two-parameter tube model

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

Chloride epitaxy of β-Ga₂O₃ layers grown on c-sapphire substrates

Technique for forming ITO films with a controlled refractive index

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