Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer A. V. RykovM. V. DorokhinA. V. Zdoroveishev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 24 December 2017 Pages: 1 - 7
Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings V. I. KozlovskyV. S. KrivobokS. I. Chentsov Review 24 December 2017 Pages: 8 - 15
Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source Yu. S. NagornovV. N. Murashev Review 24 December 2017 Pages: 16 - 21
On a combined approach to studying the correlation parameters of self-organizing structures A. V. AlpatovS. P. VikhrovN. V. Rybina Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 24 December 2017 Pages: 22 - 28
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range V. V. SobolevV. Val. SobolevD. V. Anisimov Electronic Properties of Semiconductors 24 December 2017 Pages: 29 - 33
On the specific electrophysical properties of n-InSe single crystals A. Sh. AbdinovR. F. BabaevaS. I. Amirova Electronic Properties of Semiconductors 24 December 2017 Pages: 34 - 37
On the preparation and photoelectric properties of Tl1–x In1–x Sn x Se2 (x = 0.1–0.25) alloys S. P. DanylchukG. L. MyronchukV. V. Bozhko Electronic Properties of Semiconductors 24 December 2017 Pages: 38 - 42
Structure and optical properties of ZnO with silver nanoparticles N. M. LyadovA. I. GumarovI. A. Faizrakhmanov Spectroscopy, Interaction with Radiation 24 December 2017 Pages: 43 - 49
Optical properties of PbS thin films O. R. AkhmedovM. G. GuseinaliyevN. A. Kasumov Surfaces, Interfaces, and Thin Films 24 December 2017 Pages: 50 - 53
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing R. K. YafarovV. Ya. Shanygin Surfaces, Interfaces, and Thin Films 24 December 2017 Pages: 54 - 58
Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films S. Z. ZaynabidinovA. S. SaidovA. Y. Boboev Surfaces, Interfaces, and Thin Films 24 December 2017 Pages: 59 - 65
Vertical heterostructures based on graphene and other 2D materials I. V. Antonova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 24 December 2017 Pages: 66 - 82
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry M. O. MakeevY. A. IvanovS. A. Meshkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 24 December 2017 Pages: 83 - 88
On controlling the electronic states of shallow donors using a finite-size metal gate E. A. LevchukL. F. Makarenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 24 December 2017 Pages: 89 - 96
Polarized photoluminescence of nc-Si–SiO x nanostructures E. V. MichailovskaI. Z. IndutnyiN. V. Sopinskii Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 24 December 2017 Pages: 97 - 102
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide A. I. MikhaylovA. V. AfanasyevM. Krieger Physics of Semiconductor Devices 24 December 2017 Pages: 103 - 105
Photodetectors based on CuInS2 S. V. BulyarskyL. N. VostretsovaS. A. Gavrilov Physics of Semiconductor Devices 24 December 2017 Pages: 106 - 111
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals N. E. KorsunskaE. P. ShulgaV. A. Bondarenko Physics of Semiconductor Devices 24 December 2017 Pages: 112 - 119
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots A. A. VashchenkoD. O. GoriachiyE. N. Rodlovskaya Physics of Semiconductor Devices 24 December 2017 Pages: 120 - 124
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm V. M. EmelyanovS. A. MintairovM. Z. Shvarts Physics of Semiconductor Devices 24 December 2017 Pages: 125 - 131
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters V. M. EmelyanovS. V. SorokinaM. Z. Shvarts Physics of Semiconductor Devices 24 December 2017 Pages: 132 - 137
Formation of graphite/sic structures by the thermal decomposition of silicon carbide M. G. MynbaevaA. A. Lavrent’evK. D. Mynbaev Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures 24 December 2017 Pages: 138 - 142
Erratum to: “Vacancies in epitaxial graphene” S. Yu. Davydov Erratum 24 December 2017 Pages: 143 - 143