Effect of light on the mobility of free carriers in indium-monoselenide crystals A. Sh. AbdinovR. F. BabayevaR. M. Rzayev Electronic Properties of Semiconductors 06 August 2014 Pages: 981 - 985
Specific features of magnetoresistance in overcompensated manganese-doped silicon M. K. BakhadirkhanovG. H. MavlonovC. A. Tachilin Electronic Properties of Semiconductors 06 August 2014 Pages: 986 - 988
Deformation paramagnetic defects in Fz-29Si:P crystals O. V. KoplakA. I. DmitrievR. B. Morgunov Electronic Properties of Semiconductors 06 August 2014 Pages: 989 - 995
Study of a deep donor level in n-GaAs by electron transport data obtained under hydrostatic pressure M. I. DaunovU. Z. ZalibekovA. Yu. Mollaev Electronic Properties of Semiconductors 06 August 2014 Pages: 996 - 998
Effect of interband scattering on transport phenomena in p-PbSb2Te4 S. A. NemovN. M. BlagikhM. B. Dzhafarov Electronic Properties of Semiconductors 06 August 2014 Pages: 999 - 1005
Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons V. V. KozlovskiA. A. LebedevN. V. Seredova Electronic Properties of Semiconductors 06 August 2014 Pages: 1006 - 1009
DFT modeling of Mn charged states in Ga1 − x Mn x As diluted ferromagnetic semiconductors: The cluster approach I. V. KrauklisO. Yu. PodkopaevaYu. V. Chizhov Electronic Properties of Semiconductors 06 August 2014 Pages: 1010 - 1016
On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon V. V. TsyplenkovR. Kh. ZhukavinV. N. Shastin Electronic Properties of Semiconductors 06 August 2014 Pages: 1017 - 1022
Properties of nanostructured Al doped ZnO thin films grown by spray pyrolysis technique N. Sadananda KumarKasturi V. BangeraG. K. Shivakumar Spectroscopy, Interaction with Radiation 06 August 2014 Pages: 1023 - 1027
Characterization of porous silicon carbide according to absorption and photoluminescence spectra N. I. BerezovskaYu. Yu. BacherikovA. M. Svetlichnyi Spectroscopy, Interaction with Radiation 06 August 2014 Pages: 1028 - 1030
Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots M. M. SobolevI. M. GadzhiyevV. M. Ustinov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1031 - 1035
On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots A. A. BloshkinA. I. YakimovA. V. Dvurechenskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1036 - 1040
Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors P. P. FastykovskyM. A. Glauberman Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1041 - 1045
Electrical properties of thin-film semiconductor heterojunctions n-TiO2/p-CuInS2 V. V. BrusI. G. OrletskyP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1046 - 1050
Theoretical studies on dimerization reactions of 4, 7-diphenyl-1,10-phenanthroline (BPhen) and bathocuproine (BCP) in organic semiconductors Fahimeh Shojaie Amorphous, Vitreous, and Organic Semiconductors 06 August 2014 Pages: 1051 - 1062
On the detection of U − centers in g-As2Se3 films by thermal cycling measurements of electrical conductivity K. N. EgarminE. M. EganovaE. N. Voronkov Amorphous, Vitreous, and Organic Semiconductors 06 August 2014 Pages: 1063 - 1066
On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front A. I. GusevS. K. LyubutinS. N. Tsyranov Physics of Semiconductor Devices 06 August 2014 Pages: 1067 - 1078
Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells N. I. BochkarevaY. T. RebaneY. G. Shreter Physics of Semiconductor Devices 06 August 2014 Pages: 1079 - 1087
On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example N. N. GerasimenkoK. B. TynyshtykbaevE. A. Gosteva Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1088 - 1093
Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by metal-organic chemical vapor deposition P. V. SeredinA. S. LenshinM. Rinke Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1094 - 1102
Study of postgrowth processing in the fabrication of quantum-cascade lasers V. V. MamutinN. D. IlyinskayaB. V. Pushnyi Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1103 - 1108
Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures M. N. DrozdovYu. N. DrozdovD. V. Yurasov Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1109 - 1117
Synthesis of compositionally different multicomponent metal-oxide films (SnO2) x (ZnO)1 − x (x = 1–0.5) S. I. RembezaN. N. KoshelevaC. Açiksari Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1118 - 1122
