1. Features of the dark conductivity of zinc selenide

   • V. Ya. Degoda
   • G. P. Podust

   Electronic Properties of Semiconductors 07 March 2014 Pages: 273 - 280

2. Magnetic susceptibility of Bi_{2 − x} Sb _x Te₃ (0 < x ≤ 1) crystals in the intrinsic conductivity region

   • N. P. Stepanov
   • V. Yu. Nalivkin

   Electronic Properties of Semiconductors 07 March 2014 Pages: 281 - 285

3. Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu_{1 − x} Zn _x InS₂ alloy

   • A. V. Novosad
   • V. V. Bozhko
   • V. Kazukauskas

   Electronic Properties of Semiconductors 07 March 2014 Pages: 286 - 291

4. Effect of annealing in liquid cadmium upon photoluminescence in polycrystalline cadmium telluride grown under nonequilibrium conditions

   • A. A. Pruchkina
   • N. S. Nikolaev
   • S. A. Kolosov

   Electronic Properties of Semiconductors 07 March 2014 Pages: 292 - 298

5. Plasma resonance in Pb_{1 − x} Ag _x Te alloys

   • M. K. Sharov

   Electronic Properties of Semiconductors 07 March 2014 Pages: 299 - 301

6. Interface recombination velocity measurement in SiO₂/Si

   • S. Ilahi
   • N. Yacoubi

   Surfaces, Interfaces, and Thin Films 07 March 2014 Pages: 302 - 306

7. Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface

   • M. S. Aksenov
   • N. A. Valisheva
   • O. E. Tereshchenko

   Surfaces, Interfaces, and Thin Films 07 March 2014 Pages: 307 - 311

8. On the field effect in thin films of semiconductors with Kane’s charge-carrier dispersion relation

   • I. S. Dubitskiy
   • A. M. Yafyasov

   Surfaces, Interfaces, and Thin Films 07 March 2014 Pages: 312 - 319

9. Electron-phonon interaction in short-period (GaAs) _m (AlAs) _n (001) superlattices

   • S. N. Grinyaev
   • L. N. Nikitina
   • V. G. Tyuterev

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 March 2014 Pages: 320 - 331

10. Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots

    • A. N. Reznitsky
    • A. A. Klochikhin
    • M. V. Eremenko

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 March 2014 Pages: 332 - 337

11. Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel

    • T. A. Komissarova
    • A. N. Semenov
    • S. V. Ivanov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 March 2014 Pages: 338 - 343

12. Study of the electrical properties of individual (Ga,Mn)As nanowires

    • A. D. Bouravleuv
    • N. V. Sibirev
    • G. E. Cirlin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 March 2014 Pages: 344 - 349

13. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum

    • M. G. Mynbaeva
    • S. P. Lebedev
    • V. I. Nikolaev

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 March 2014 Pages: 350 - 353

14. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    • Sh. A. Mirsagatov
    • O. K. Ataboev
    • Zh. T. Nazarov

    Physics of Semiconductor Devices 07 March 2014 Pages: 354 - 359

15. On the application of thin films of silicon nanoparticles for increasing solar cell efficiency

    • S. G. Dorofeev
    • N. N. Kononov
    • B. G. Gribov

    Physics of Semiconductor Devices 07 March 2014 Pages: 360 - 368

16. Optimization of carrier mobility in luminescence layers based on europium β-diketonates in hybrid light-emitting structures

    • M. A. Bochkov
    • A. G. Vitukhnovsky
    • P. N. Brunkov

    Physics of Semiconductor Devices 07 March 2014 Pages: 369 - 372

17. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

    • V. V. Shamakhov
    • D. N. Nikolaev
    • I. S. Tarasov

    Physics of Semiconductor Devices 07 March 2014 Pages: 373 - 376

18. Organic light-emitting devices with multi-shell quantum dots connected with polythiophene derivatives

    • A. A. Vashchenko
    • A. G. Vitukhnovsky
    • D. N. Bychkovsky

    Physics of Semiconductor Devices 07 March 2014 Pages: 377 - 380

19. Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation

    • D. A. Kudryashov
    • A. S. Gudovskikh
    • A. Yu. Egorov

    Physics of Semiconductor Devices 07 March 2014 Pages: 381 - 386

20. Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate

    • K. Yu. Osipov
    • L. E. Velikovskiy
    • V. A. Kagadei

    Fabrication, Treatment, and Testing of Materials and Structures 07 March 2014 Pages: 387 - 391

21. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions

    • A. A. Lazarenko
    • E. V. Nikitina
    • A. Yu. Egorov

    Fabrication, Treatment, and Testing of Materials and Structures 07 March 2014 Pages: 392 - 396

22. Formation of two-layer composite-on-insulator structures based on porous silicon and SnO _x . Study of their electrical and gas-sensing properties

    • V. V. Bolotov
    • V. E. Roslikov
    • N. A. Davletkildeev

    Fabrication, Treatment, and Testing of Materials and Structures 07 March 2014 Pages: 397 - 401

23. Si_{1 − x} Ge _x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

    • S. A. Denisov
    • S. A. Matveev
    • Z. F. Krasilnik

    Fabrication, Treatment, and Testing of Materials and Structures 07 March 2014 Pages: 402 - 405

24. Effect of features of the technology of polycrystalline CdTe growth on the conductivity and deep level spectrum after annealing

    • E. A. Bobrova
    • Yu. V. Klevkov
    • N. N. Senturina

    Fabrication, Treatment, and Testing of Materials and Structures 07 March 2014 Pages: 406 - 412

25. Doping of silicon with selenium by diffusion from the gas phase

    • Yu. A. Astrov
    • V. B. Shuman
    • A. N. Lodygin

    Fabrication, Treatment, and Testing of Materials and Structures 07 March 2014 Pages: 413 - 416