Electron spin polarization and longitudinal autosoliton current in p-InSb in a longitudinal magnetic field I. K. KamilovA. A. StepurenkoA. E. Gummetov Electronic Properties of Semiconductors 14 February 2014 Pages: 135 - 138
Effect of annealing on the electrical properties of Pb1 − x Mn x Te single crystals with excess tellurium G. Z. BagiyevaG. D. AbdinovaD. Sh. Abdinov Electronic Properties of Semiconductors 14 February 2014 Pages: 139 - 141
Optical absorption of vanadium in ZnSe single crystals Yu. A. Nitsuk Electronic Properties of Semiconductors 14 February 2014 Pages: 142 - 147
Role of charged defects in the photoconductivity of Se95As5 chalcogenide glassy semiconductor with the EuF3 impurity A. I. IsayevS. I. MekhtiyevaV. Z. Zeynalov Electronic Properties of Semiconductors 14 February 2014 Pages: 148 - 151
Anomalies in the thermal and electrical conductivity of CuIn5Se8 crystals V. P. MygalA. V. ButI. V. Bodnar Electronic Properties of Semiconductors 14 February 2014 Pages: 152 - 155
Optical and electrical properties of 4H-SiC irradiated with Xe ions E. V. KalininaN. A. ChuchvagaV. A. Skuratov Electronic Properties of Semiconductors 14 February 2014 Pages: 156 - 162
Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation B. N. DenisovE. V. Nikishin Electronic Properties of Semiconductors 14 February 2014 Pages: 163 - 166
Electron-phonon processes in semiconductors at low temperatures S. A. Aliev Electronic Properties of Semiconductors 14 February 2014 Pages: 167 - 172
Raman scattering in PbTe and PbSnTe films: In situ phase transformations V. A. VolodinM. P. SinyukovE. V. Fedosenko Spectroscopy, Interaction with Radiation 14 February 2014 Pages: 173 - 177
Impact ionization of excitons in single-crystal silicon and its effect on the exciton concentration and luminescence near the fundamental absorption edge A. M. Emel’yanov Spectroscopy, Interaction with Radiation 14 February 2014 Pages: 178 - 183
Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves T. A. BryantsevaD. V. LybchenkoR. I. Markov Spectroscopy, Interaction with Radiation 14 February 2014 Pages: 184 - 190
Features of the transformation of the exciton cathodoluminescence spectra of CdSe epitaxial layers with increasing excitation level E. A. SenokosovV. I. ChukitaM. V. Chukichev Spectroscopy, Interaction with Radiation 14 February 2014 Pages: 191 - 194
Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment I. I. IzhninA. I. IzhninS. A. Dvoretsky Spectroscopy, Interaction with Radiation 14 February 2014 Pages: 195 - 198
Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon A. N. MikhaylovA. I. BelovE. I. Shek Spectroscopy, Interaction with Radiation 14 February 2014 Pages: 199 - 203
Dielectric properties of MnGa2S4 single crystals in an alternating electric field N. N. NiftievO. B. TagievF. M. Mamedov Surfaces, Interfaces, and Thin Films 14 February 2014 Pages: 204 - 206
Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation I. A. TambasovV. G. MyagkovV. V. Ivanov Surfaces, Interfaces, and Thin Films 14 February 2014 Pages: 207 - 211
Photosensitivity of structures with quantum wells under normal radiation incidence V. B. KulikovV. P. Chaly Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 14 February 2014 Pages: 212 - 215
Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields E. P. SinyavskiiS. A. Karapetyan Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 14 February 2014 Pages: 216 - 218
Isotype surface-barrier n-TiN/n-Si heterostructure M. N. SolovanV. V. BrusP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 14 February 2014 Pages: 219 - 223
Inelastic electron scattering cross-section spectroscopy of Ge x Si1 − x nanoheterostructures A. S. ParshinE. P. P’yanovskayaM. Yu. Esin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 14 February 2014 Pages: 224 - 227
On the effect of electron-phonon interaction on the temperature dependences of magnetotransport in quantum hall systems A. A. GreshnovY. M. Beltukov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 14 February 2014 Pages: 228 - 234
Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix A. V. BelolipetskiyO. B. GusevI. N. Yassievich Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 14 February 2014 Pages: 235 - 238
Effect of bremsstrahlung γ-ray photons and neutrons on the parameters of indium-selenium photoconverters O. N. SydorO. A. SydorV. I. Dubinko Physics of Semiconductor Devices 14 February 2014 Pages: 239 - 244
Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy A. V. SolomonovS. A. TarasovYu. N. Makarov Physics of Semiconductor Devices 14 February 2014 Pages: 245 - 250
Synthesis of thin p-type rutile films V. M. IevlevS. B. KushevM. S. Smirnov Fabrication, Treatment, and Testing of Materials and Structures 14 February 2014 Pages: 251 - 256
Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis G. A. BordovskiiA. V. MarchenkoE. I. Terukov Fabrication, Treatment, and Testing of Materials and Structures 14 February 2014 Pages: 257 - 262
Comparative photoelectric characteristics of nanostructured Pb1 − x Sn x Se films obtained by the codeposition and layer-by-layer deposition of PbSe and SnSe H. N. MukhamedzyanovV. F. MarkovL. N. Maskaeva Fabrication, Treatment, and Testing of Materials and Structures 14 February 2014 Pages: 263 - 267
Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal S. A. GrudinkinN. A. FeoktistovV. G. Golubev Fabrication, Treatment, and Testing of Materials and Structures 14 February 2014 Pages: 268 - 271
