1. Determination of the degree of ordering of materials’ structure by calculating the information-correlation characteristics

   • S. P. Vikhrov
   • T. G. Avacheva
   • A. P. Avachev

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 18 April 2012 Pages: 415 - 421

2. Phase transition and correlation effects in vanadium dioxide

   • A. V. Ilinskiy
   • O. E. Kvashenkina
   • E. B. Shadrin

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 18 April 2012 Pages: 422 - 429

3. Effect of γ-ray radiation on electrical properties of heat-treated Tb _x Sn_{1 − x} Se single crystals

   • J. I. Huseynov
   • T. A. Jafarov

   Electronic Properties of Semiconductors 18 April 2012 Pages: 430 - 432

4. Electronic properties and deep traps in electron-irradiated n-GaN

   • V. N. Brudnyi
   • S. S. Verevkin
   • N. B. Smirnov

   Electronic Properties of Semiconductors 18 April 2012 Pages: 433 - 439

5. Comparison of electronic structure of as grown and solar grade silicon samples

   • R. Saravanan
   • R. A. J. R. Sheeba

   Electronic Properties of Semiconductors 18 April 2012 Pages: 440 - 446

6. Effect of copper doping on kinetic coefficients and their anisotropy in PbSb₂Te₄

   • S. A. Nemov
   • N. M. Blagih
   • L. E. Shelimova

   Electronic Properties of Semiconductors 18 April 2012 Pages: 447 - 451

7. Static and dynamic photoinduced magnetic effects in yttrium-iron garnet lightly doped with barium ions

   • N. V. Vorob’eva
   • R. Z. Khalilov

   Electronic Properties of Semiconductors 18 April 2012 Pages: 452 - 455

8. Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

   • V. V. Emtsev
   • A. M. Ivanov
   • G. Wagner

   Electronic Properties of Semiconductors 18 April 2012 Pages: 456 - 465

9. Absorptivity of semiconductors used in the production of solar cell panels

   • L. A. Kosyachenko
   • E. V. Grushko
   • T. I. Mikityuk

   Spectroscopy, Interaction with Radiation 18 April 2012 Pages: 466 - 470

10. Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy study

    • M. V. Lebedev
    • T. Masuda
    • K. Uosaki

    Surfaces, Interfaces, and Thin Films 18 April 2012 Pages: 471 - 477

11. Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure

    • A. V. Leonov
    • A. D. Mokrushin
    • N. M. Omeljanovskaja

    Surfaces, Interfaces, and Thin Films 18 April 2012 Pages: 478 - 483

12. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

    • D. S. Ponomarev
    • I. S. Vasil’evskii
    • N. A. Uzeeva

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 April 2012 Pages: 484 - 490

13. Structural control over conductivity and conduction type in thin films of polyphenylquinones

    • V. M. Svetlichnyi
    • E. L. Aleksandrova
    • N. V. Matyushina

    Amorphous, Vitreous, and Organic Semiconductors 18 April 2012 Pages: 491 - 495

14. Carbazole-containing polyphenylquinolines as a basis for optoelectronic materials with white luminescence

    • V. M. Svetlichnyi
    • E. L. Aleksandrova
    • N. V. Matyushina

    Amorphous, Vitreous, and Organic Semiconductors 18 April 2012 Pages: 496 - 503

15. Photoinduced etching of thin films of chalcogenide glassy semiconductors

    • V. A. Dan’ko
    • I. Z. Indutnyi
    • O. S. Lytvyn

    Amorphous, Vitreous, and Organic Semiconductors 18 April 2012 Pages: 504 - 508

16. Effect of avalanche-type barrier discharge on a silver halide photographic material in the case of blocked ionic conductivity

    • A. P. Boychenko

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 18 April 2012 Pages: 509 - 513

17. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

    • Jung-Hui Tsai
    • Sheng-Shiun Ye
    • Wen-Shiung Lour

    Physics of Semiconductor Devices 18 April 2012 Pages: 514 - 518

18. Operation of a semiconductor opening switch at ultrahigh current densities

    • S. K. Lyubutin
    • S. N. Rukin
    • S. N. Tsyranov

    Physics of Semiconductor Devices 18 April 2012 Pages: 519 - 527

19. Subnanosecond 4H-SiC diode current breakers

    • P. A. Ivanov
    • I. V. Grekhov

    Physics of Semiconductor Devices 18 April 2012 Pages: 528 - 531

20. Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p ⁺-p-n ⁺ diodes: Effect of impurity breakdown in the p-type base

    • P. A. Ivanov
    • A. S. Potapov
    • T. P. Samsonova

    Physics of Semiconductor Devices 18 April 2012 Pages: 532 - 534

21. Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

    • A. V. Sorochkin
    • V. S. Varavin
    • M. V. Yakushev

    Physics of Semiconductor Devices 18 April 2012 Pages: 535 - 540

22. Effect of microwave irradiation on the resistance of Au-TiB _x -Ge-Au-n-n ⁺-n ⁺⁺-GaAs(InP) ohmic contacts

    • A. E. Belyaev
    • A. V. Sachenko
    • V. N. Sheremet

    Fabrication, Treatment, and Testing of Materials and Structures 18 April 2012 Pages: 541 - 544

23. Effect of post oxidation annealing on electrical characteristics of Ni/SiO₂/4H-SiC capacitor with varying oxide thickness

    • Sanjeev K. Gupta
    • A. Azam
    • J. Akhtar

    Fabrication, Treatment, and Testing of Materials and Structures 18 April 2012 Pages: 545 - 551

24. Formation of anodic layers on InAs (111)III. Study of the chemical composition

    • N. A. Valisheva
    • O. E. Tereshchenko
    • V. I. Bukhtiyarov

    Fabrication, Treatment, and Testing of Materials and Structures 18 April 2012 Pages: 552 - 558