Kinetics of crack formation in porous silicon D. S. GaevS. Sh. Rekhviashvili Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 17 February 2012 Pages: 137 - 140
Determination of the ionization energy of vanadium levels in zinc selenide V. P. MakhniyO. V. Kinzerskaya Electronic Properties of Semiconductors 17 February 2012 Pages: 141 - 142
Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation P. A. ZiaziuliaV. L. MalevichA. Krotkus Spectroscopy, Interaction with Radiation 17 February 2012 Pages: 143 - 148
Effect of annealing on the luminescence of p-CuI crystals A. N. GruzintsevW. N. Zagorodnev Spectroscopy, Interaction with Radiation 17 February 2012 Pages: 149 - 154
Phenomenon of the inverse adsorption piezoelectric effect in CdTe and CdHgTe semiconductors O. A. Fedyaeva Surfaces, Interfaces, and Thin Films 17 February 2012 Pages: 155 - 158
Generation of electromagnetic radiation based on nanotubes under a constant electric field and an electromagnetic wave field N. R. SadykovN. A. Scorkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 February 2012 Pages: 159 - 164
Exciton states in quasi-zero-dimensional semiconductor nanosystems S. I. Pokutnyi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 February 2012 Pages: 165 - 170
Heat induced nanoforms of zinc oxide quantum dots and their characterization Anindita DeyRuma BasuPapiya Nandy Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 February 2012 Pages: 171 - 174
Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires G. E. CirlinM. TchernychevaJ. -C. Harmand Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 February 2012 Pages: 175 - 178
Formation of (Ga,Mn)As nanowires and study of their magnetic properties A. D. BouravleuvG. E. CirlinV. G. Dubrovskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 February 2012 Pages: 179 - 183
Influence of defect formation as a result of incorporation of a Mn δ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells A. P. GorshkovI. A. KarpovichI. L. Kalenteva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 February 2012 Pages: 184 - 187
Structural transformations in ZnS:Cu in the course of thermal annealing Yu. Yu. BacherikovN. E. KorsunskaA. G. Zhuk Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 February 2012 Pages: 188 - 192
Adsorption-induced energy gap in the density of states of single-sheet graphene S. Yu. Davydov Carbon Systems 17 February 2012 Pages: 193 - 198
Insulator band gap in single-side-hydrogenated graphene nanoribbons L. A. OpenovA. I. Podlivaev Carbon Systems 17 February 2012 Pages: 199 - 202
Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets Kuei-Yi ChuMeng-Hsueh ChiangWen-Chau Liu Physics of Semiconductor Devices 17 February 2012 Pages: 203 - 207
Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs A. L. ZakheimM. E. LevinshteinN. M. Shmidt Physics of Semiconductor Devices 17 February 2012 Pages: 208 - 212
Numerical simulation of optical feedback on a quantum dot lasers Amin H. Al-KhursanBasim Abdullattif GhalibSabri J. Al-Obaidi Physics of Semiconductor Devices 17 February 2012 Pages: 213 - 220
Photosensitivity of ZnO/CdS/Cu(In,Ga)Se2/Mo thin-film solar cells fabricated on various substrates V. Yu. RudYu. V. RudY. W. Song Physics of Semiconductor Devices 17 February 2012 Pages: 221 - 224
Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers A. E. ZhukovA. V. SavelyevN. V. Kryzhanovskaya Physics of Semiconductor Devices 17 February 2012 Pages: 225 - 230
Features of simultaneous ground- and excited-state lasing in quantum dot lasers A. E. ZhukovM. V. MaximovV. V. Klimenko Physics of Semiconductor Devices 17 February 2012 Pages: 231 - 235
Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region E. A. GrebenshchikovaA. N. ImenkovYu. P. Yakovlev Physics of Semiconductor Devices 17 February 2012 Pages: 236 - 240
High-order diffraction gratings for high-power semiconductor lasers V. V. Vasil’evaD. A. VinokurovI. S. Tarasov Physics of Semiconductor Devices 17 February 2012 Pages: 241 - 246
Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm) S. A. KarandashevB. A. MatveevN. M. Stus’ Physics of Semiconductor Devices 17 February 2012 Pages: 247 - 250
Conduction mechanism of an infrared emitting diode: Impedance spectroscopy and current-voltage analysis Adem DönmezHabibe Bayhan Physics of Semiconductor Devices 17 February 2012 Pages: 251 - 256
Implantation of sodium ions into germanium V. M. Korol’Yu. Kudriavtsev Fabrication, Treatment, and Testing of Materials and Structures 17 February 2012 Pages: 257 - 262
Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics A. L. VikharevA. M. GorbachevYu. Yu. Fedorov Fabrication, Treatment, and Testing of Materials and Structures 17 February 2012 Pages: 263 - 266
The effect of annealing on the properties of Ga2O3 anodic films V. M. KalyginaA. N. ZarubinT. M. Yaskevich Fabrication, Treatment, and Testing of Materials and Structures 17 February 2012 Pages: 267 - 273