1. Laser-stimulated modification of the impurity energy spectrum of gallium selenide intercalated with cobalt

   • I. I. Grygorchak
   • A. I. Pelekhovych
   • N. V. Volynskaya

   Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 375 - 378

2. Determination of the energy and concentration of amphoteric defects by differential processing of the temperature dependence of the concentration of free charge carriers

   • A. G. Nikitina
   • V. V. Zuev

   Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 379 - 382

3. Effect of transverse magnetic field on the behavior of longitudinal autosolitons in p-InSb

   • I. K. Kamilov
   • A. A. Stepurenko
   • A. S. Kovalev

   Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 383 - 388

4. Special features of optical and photoelectric properties of nominally undoped and Cu-doped CdS single crystals

   • G. E. Davidyuk
   • V. V. Bozhko
   • A. G. Kevshin

   Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 389 - 393

5. Effect of fluctuations on electron and phonon processes and thermodynamic parameters of Ag₂Te and Ag₂Se in the region of phase transition

   • S. A. Aliev
   • F. F. Aliev

   Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 394 - 400

6. Magnetic susceptibility of Bi₂Te₃-Sb₂Te₃ alloys

   • N. P. Stepanov
   • A. K. Gil’fanov
   • Yu. V. Granatkina

   Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 401 - 405

7. Effect of conditions of deposition and annealing of indium oxide films doped with fluorine (IFO) on the photovoltaic properties of the IFO/p-Si heterojunction

   • G. G. Untila
   • T. N. Kost
   • O. I. Solodukha

   Semiconductor Structures, Interfaces, and Surfaces 04 May 2008 Pages: 406 - 413

8. Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage

   • S. I. Drapak
   • S. V. Gavrylyuk
   • O. S. Lytvyn

   Semiconductor Structures, Interfaces, and Surfaces 04 May 2008 Pages: 414 - 421

9. Low-temperature anomalies of the photoelectromagnetic effect in p-Cd _x Hg_{1 − x} Te due to recharging of surface states

   • S. G. Gassan-zade
   • M. V. Strikha
   • G. A. Shepelsky

   Semiconductor Structures, Interfaces, and Surfaces 04 May 2008 Pages: 422 - 428

10. Emission spectra of InGaN/AlGaN/GaN quantum well heterostructures: Model of the two-dimensional joint density of states

    • M. L. Badgutdinov
    • A. É. Yunovich

    Low-Dimensional Systems 04 May 2008 Pages: 429 - 438

11. Effect of temperature and illumination intensity on the formation of metastable states in a-Si:H

    • I. A. Kurova
    • N. N. Ormont

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 04 May 2008 Pages: 439 - 442

12. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    • G. I. Ayzenshtat
    • M. A. Lelekov
    • O. P. Tolbanov

    Physics of Semiconductor Devices 04 May 2008 Pages: 443 - 447

13. Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase

    • Yu. A. Astrov
    • V. B. Shuman
    • A. N. Makhova

    Physics of Semiconductor Devices 04 May 2008 Pages: 448 - 452

14. Thermal-resistant TiB _x -n-GaP Schottky diodes

    • A. E. Belyaev
    • N. S. Boltovets
    • M. U. Nasyrov

    Physics of Semiconductor Devices 04 May 2008 Pages: 453 - 457

15. Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range

    • B. E. Zhurtanov
    • N. D. Il’inskaya
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 04 May 2008 Pages: 458 - 462

16. Nonlinear-optical frequency conversion in a dual-wavelength vertical-external-cavity surface-emitting laser

    • Yu. A. Morozov
    • I. S. Nefedov
    • M. Yu. Morozov

    Physics of Semiconductor Devices 04 May 2008 Pages: 463 - 469

17. Boundary effect in electrochemical etching of silicon

    • E. V. Astrova
    • A. A. Nechitaĭlov

    Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 470 - 474

18. Optical and electron spectroscopy study of initial stages of room-temperature Mg film growth on Si (111)

    • K. N. Galkin
    • S. A. Dotsenko
    • S. M. Shivaprasad

    Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 475 - 480

19. Kinetics of resistive response of SnO_{2 − x} thin films in gas environment

    • S. V. Ryabtsev
    • A. V. Yukish
    • É. P. Domashevskaya

    Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 481 - 485

20. Properties of zinc oxide films synthesized in low-temperature plasma discharge under conditions of bombardment with plasma components

    • A. A. Serdobintsev
    • A. G. Veselov
    • O. A. Kiryasova

    Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 486 - 489

21. Diagnostics of low-barrier Schottky diodes with near-surface δ-doping

    • V. I. Shashkin
    • A. V. Murel’

    Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 490 - 492

22. Zakhariĭ Fishelevich Krasil’nik (Dedicated to his 60th birthday)

    Personalia 04 May 2008 Pages: 493 - 494

23. Vladimir Ivanovich Ivanov-Omskiĭ (Dedicated to his 75th birthday)

    Personalia 04 May 2008 Pages: 495 - 495