Laser-stimulated modification of the impurity energy spectrum of gallium selenide intercalated with cobalt I. I. GrygorchakA. I. PelekhovychN. V. Volynskaya Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 375 - 378
Determination of the energy and concentration of amphoteric defects by differential processing of the temperature dependence of the concentration of free charge carriers A. G. NikitinaV. V. Zuev Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 379 - 382
Effect of transverse magnetic field on the behavior of longitudinal autosolitons in p-InSb I. K. KamilovA. A. StepurenkoA. S. Kovalev Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 383 - 388
Special features of optical and photoelectric properties of nominally undoped and Cu-doped CdS single crystals G. E. DavidyukV. V. BozhkoA. G. Kevshin Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 389 - 393
Effect of fluctuations on electron and phonon processes and thermodynamic parameters of Ag2Te and Ag2Se in the region of phase transition S. A. AlievF. F. Aliev Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 394 - 400
Magnetic susceptibility of Bi2Te3-Sb2Te3 alloys N. P. StepanovA. K. Gil’fanovYu. V. Granatkina Electronic and Optical Properties of Semiconductors 04 May 2008 Pages: 401 - 405
Effect of conditions of deposition and annealing of indium oxide films doped with fluorine (IFO) on the photovoltaic properties of the IFO/p-Si heterojunction G. G. UntilaT. N. KostO. I. Solodukha Semiconductor Structures, Interfaces, and Surfaces 04 May 2008 Pages: 406 - 413
Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage S. I. DrapakS. V. GavrylyukO. S. Lytvyn Semiconductor Structures, Interfaces, and Surfaces 04 May 2008 Pages: 414 - 421
Low-temperature anomalies of the photoelectromagnetic effect in p-Cd x Hg1 − x Te due to recharging of surface states S. G. Gassan-zadeM. V. StrikhaG. A. Shepelsky Semiconductor Structures, Interfaces, and Surfaces 04 May 2008 Pages: 422 - 428
Emission spectra of InGaN/AlGaN/GaN quantum well heterostructures: Model of the two-dimensional joint density of states M. L. BadgutdinovA. É. Yunovich Low-Dimensional Systems 04 May 2008 Pages: 429 - 438
Effect of temperature and illumination intensity on the formation of metastable states in a-Si:H I. A. KurovaN. N. Ormont Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 04 May 2008 Pages: 439 - 442
Dynamics of formation of photoresponse in a detector structure made of gallium arsenide G. I. AyzenshtatM. A. LelekovO. P. Tolbanov Physics of Semiconductor Devices 04 May 2008 Pages: 443 - 447
Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase Yu. A. AstrovV. B. ShumanA. N. Makhova Physics of Semiconductor Devices 04 May 2008 Pages: 448 - 452
Thermal-resistant TiB x -n-GaP Schottky diodes A. E. BelyaevN. S. BoltovetsM. U. Nasyrov Physics of Semiconductor Devices 04 May 2008 Pages: 453 - 457
Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range B. E. ZhurtanovN. D. Il’inskayaYu. P. Yakovlev Physics of Semiconductor Devices 04 May 2008 Pages: 458 - 462
Nonlinear-optical frequency conversion in a dual-wavelength vertical-external-cavity surface-emitting laser Yu. A. MorozovI. S. NefedovM. Yu. Morozov Physics of Semiconductor Devices 04 May 2008 Pages: 463 - 469
Boundary effect in electrochemical etching of silicon E. V. AstrovaA. A. Nechitaĭlov Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 470 - 474
Optical and electron spectroscopy study of initial stages of room-temperature Mg film growth on Si (111) K. N. GalkinS. A. DotsenkoS. M. Shivaprasad Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 475 - 480
Kinetics of resistive response of SnO2 − x thin films in gas environment S. V. RyabtsevA. V. YukishÉ. P. Domashevskaya Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 481 - 485
Properties of zinc oxide films synthesized in low-temperature plasma discharge under conditions of bombardment with plasma components A. A. SerdobintsevA. G. VeselovO. A. Kiryasova Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 486 - 489
Diagnostics of low-barrier Schottky diodes with near-surface δ-doping V. I. ShashkinA. V. Murel’ Fabrication, Treatment, and Testing of Materials and Structures 04 May 2008 Pages: 490 - 492
Zakhariĭ Fishelevich Krasil’nik (Dedicated to his 60th birthday) Personalia 04 May 2008 Pages: 493 - 494
Vladimir Ivanovich Ivanov-Omskiĭ (Dedicated to his 75th birthday) Personalia 04 May 2008 Pages: 495 - 495