1. Formation of nanostructures in a Ga₂Se₃/GaAs system

   • N. N. Bezryadin
   • G. I. Kotov
   • A. A. Starodubtsev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 989 - 992

2. Microphotoluminescence of undoped single-crystal zinc telluride produced by nonequilibrium vapor-phase growth techniques

   • V. V. Ushakov
   • Yu. V. Klevkov

   Electronic and Optical Properties of Semiconductors Pages: 993 - 997

3. Exact self-compensation of conduction in Cd_0.95Zn_0.05Te:Cl crystals in a wide range of Cd vapor pressures

   • O. A. Matveev
   • A. I. Terent’ev
   • V. P. Karpenko

   Electronic and Optical Properties of Semiconductors Pages: 998 - 1003

4. Optical properties of ZnGeP₂ in the UV spectral region

   • Yu. M. Basalaev
   • A. B. Gordienko
   • A. S. Poplavnoi

   Electronic and Optical Properties of Semiconductors Pages: 1004 - 1006

5. Instability of drift waves in two-component solid-state plasma

   • A. A. Bulgakov
   • O. V. Shramkova

   Electronic and Optical Properties of Semiconductors Pages: 1007 - 1012

6. Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters

   • P. N. Brunkov
   • A. A. Gutkin
   • B. R. Semyagin

   Electronic and Optical Properties of Semiconductors Pages: 1013 - 1016

7. Study of the properties of Hg_{1−x−y−z} Cd_xMn_yZn_zTe as a new infrared optoelectronic material

   • I. N. Gorbatyuk
   • S. E. Ostapov
   • S. Yu. Karelin

   Electronic and Optical Properties of Semiconductors Pages: 1017 - 1022

8. Transport coefficients of n-Bi₂Te_2.7Se_0.3 in a two-band model of the electron spectrum

   • P. P. Konstantinov
   • L. V. Prokof’eva
   • V. A. Chistyakov

   Electronic and Optical Properties of Semiconductors Pages: 1023 - 1027

9. The formation of nanodimensional structures on the surface of p-CdTe crystals exposed to a single radiation pulse from a ruby laser

   • A. Baidullaeva
   • A. I. Vlasenko
   • P. E. Mozol’

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1028 - 1031

10. Effect of a submonolayer metal film on band bending in a semiconductor substrate

    • S. Yu. Davydov
    • A. V. Pavlyk

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1032 - 1034

11. Photoelectric properties of surface-barrier structures based on Zn_2−2x Cu_xIn_xSe₂ films obtained by selenization

    • V. Yu. Rud’
    • Yu. V. Rud’
    • O. N. Sergeeva

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1035 - 1039

12. Simulation of special features of the drift-mobility saturation in submicrometer silicon structures

    • V. A. Gergel’
    • Yu. V. Gulyaev
    • M. N. Yakupov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1040 - 1044

13. Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers

    • A. M. Emel’yanov
    • N. A. Sobolev
    • E. O. Parshin

    Low-Dimensional Systems Pages: 1045 - 1047

14. A spin filter with a quantum point contact in a dilute magnetic semiconductor

    • S. A. Ignatenko
    • V. E. Borisenko

    Low-Dimensional Systems Pages: 1048 - 1052

15. The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates

    • M. M. Sobolev
    • G. E. Cirlin
    • A. A. Tonkikh

    Low-Dimensional Systems Pages: 1053 - 1057

16. Electronic structure of titanium disulfide nanostructures: Monolayers, nanostripes, and nanotubes

    • V. V. Ivanovskaya
    • G. Seifert
    • A. L. Ivanovskii

    Low-Dimensional Systems Pages: 1058 - 1065

17. Exciton states in semiconductor spherical nanostructures

    • S. I. Pokutnyi

    Low-Dimensional Systems Pages: 1066 - 1070

18. High-frequency nonlinear response of double-well nanostructures

    • V. F. Elesin
    • I. Yu. Kateev

    Low-Dimensional Systems Pages: 1071 - 1075

19. Polarization of the optical emission of polaron excitons in anisotropic quantum dots

    • A. Yu. Maslov
    • O. V. Proshina

    Low-Dimensional Systems Pages: 1076 - 1081

20. A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure

    • D. V. Morozov
    • K. V. Smirnov
    • G. N. Goltsman

    Physics of Semiconductor Devices Pages: 1082 - 1086

21. Semiconductor WGM lasers for the mid-IR spectral range

    • V. V. Sherstnev
    • A. M. Monakhov
    • G. Hill

    Physics of Semiconductor Devices Pages: 1087 - 1092

22. Semiconductor-insulator structures in the phototargets of vidicons sensitive in the middle infrared region of the spectrum

    • N. F. Kovtonyuk
    • V. P. Misnik
    • A. V. Sokolov

    Physics of Semiconductor Devices Pages: 1093 - 1095

23. A mechanism of electroluminescence in silicon diodes with a high dislocation density

    • A. V. Sachenko
    • Yu. V. Kryuchenko

    Physics of Semiconductor Devices Pages: 1096 - 1101

24. A combined model of a resonant-tunneling diode

    • I. I. Abramov
    • I. A. Goncharenko
    • N. V. Kolomeitseva

    Physics of Semiconductor Devices Pages: 1102 - 1109