1. Photosensitive polymer semiconductors

   • E. L. Aleksandrova

   Review Pages: 1115 - 1159

2. Determination of the oxygen diffusion profile in polycrystalline lead selenide layers using nuclear microanalysis

   • A. E. Gamarts
   • V. M. Lebedev
   • D. B. Chesnokova

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1160 - 1163

3. Electronic and structural transitions in Pb_1−x Ge_xTe:Ga alloys under pressure

   • E. P. Skipetrov
   • E. A. Zvereva
   • V. E. Slyn’ko

   Electronic and Optical Properties of Semiconductors Pages: 1164 - 1167

4. Magnetic-field dependences of the conductivity and hall factor in MBE-grown Cd_XHg_1−X Te layers

   • P. A. Bakhtin
   • S. A. Dvoretskii
   • Yu. G. Sidorov

   Electronic and Optical Properties of Semiconductors Pages: 1168 - 1171

5. Effect of low-temperature annealing on electrical properties of n-HgCdTe

   • P. A. Bakhtin
   • S. A. Dvoretskii
   • Yu. G. Sidorov

   Electronic and optical Properties of Semiconductors Pages: 1172 - 1175

6. Formation and study of buried SiC layers with a high content of radiation defects

   • E. V. Bogdanova
   • V. V. Kozlovski
   • A. A. Lebedev

   Electronic and optical Properties of Semiconductors Pages: 1176 - 1178

7. A model of electrical isolation in GaN and ZnO bombarded with light ions

   • A. I. Titov
   • P. A. Karasev
   • S. O. Kucheyev

   Electronic and Optical Properties of Semiconductors Pages: 1179 - 1186

8. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

   • E. V. Kalinina
   • G. F. Kholuyanov
   • K. Havancsak

   Electronic and Optical Properties of Semiconductors Pages: 1187 - 1191

9. Fabrication and photosensitivity of heterojunctions based on CuIn₃Se₅ crystals

   • I. V. Bodnar’
   • S. E. Nikitin
   • M. V. Yakushev

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1192 - 1197

10. Influence of hydrogen sulfide on electrical and photoelectric properties of Al-p-Si-SnO₂:Cu-Ag heterostructures

    • S. V. Slobodchikov
    • E. V. Russu
    • Kh. M. Salikhov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1198 - 1201

11. Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100)

    • A. A. Tonkikh
    • G. E. Cirlin
    • P. Werner

    Low-Dimensional Systems Pages: 1202 - 1206

12. Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

    • M. V. Maksimov
    • D. S. Sizov
    • D. Bimberg

    Low-Dimensional Systems Pages: 1207 - 1211

13. Calculation of the thermoelectric figure of merit for multilayer structures with quantum wells in the case of carrier scattering by polar optical phonons

    • D. A. Pshenai-Severin
    • Yu. I. Ravich

    Low-Dimensional Systems Pages: 1212 - 1216

14. Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique

    • A. A. Tonkikh
    • G. E. Cirlin
    • V. M. Ustinov

    Low-Dimensional Systems Pages: 1217 - 1220

15. Distribution of the density of electronic states in the energy gap of microcrystalline hydrogenated silicon

    • A. G. Kazanskii
    • K. Yu. Khabarova

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1221 - 1224

16. Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines

    • A. I. Yakimov
    • A. V. Dvurechenskii
    • K. S. Zhuravlev

    Physics of Semiconductor Devices Pages: 1225 - 1229

17. Indium arsenide light-emitting diodes with a cavity formed by an anode contact and semiconductor-air interface

    • N. V. Zotova
    • N. D. Il’inskaya
    • V. V. Shustov

    Physics of Semiconductor Devices Pages: 1230 - 1234

18. Microwave field-effect transistors based on group-III nitrides

    • S. B. Aleksandrov
    • D. A. Baranov
    • A. A. Chernyavskii

    Physics of Semiconductor Devices Pages: 1235 - 1239