1. Redistribution of ytterbium and oxygen in annealing of silicon layers amorphized by implantation

   • O. V. Aleksandrov
   • Yu. A. Nikolaev
   • A. Godines

   Atomic Structure and Nonelectronic Properties Of Semiconductors Pages: 1363 - 1366

2. Two-electron tin centers formed in lead chalcogenides as a result of nuclear transmutations

   • S. A. Nemov
   • P. P. Seregin
   • N. P. Seregin

   Electronic and Optical Properties of Semiconductors Pages: 1367 - 1372

3. Specific features of conductivity of Cd_1−x Zn_xTe and Cd_1−x Mn_xTe single crystals

   • L. A. Kosyachenko
   • A. V. Markov
   • V. M. Sklyarchuk

   Electronic and Optical Properties of Semiconductors Pages: 1373 - 1379

4. Photoluminescence at 1.5 µm from single-crystal silicon layers subjected to mechanical treatment

   • R. I. Batalov
   • R. M. Bayazitov
   • V. Kh. Kudoyarova

   Electronic and Optical Properties of Semiconductors Pages: 1380 - 1382

5. Investigation of the ZnS-CdHgTe interface

   • P. V. Biryulin
   • S. A. Dudko
   • V. I. Turinov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1383 - 1386

6. Mechanisms of photocurrent generation in In₂O₃-InSe heterojunctions

   • V. P. Makhniy
   • O. I. Yanchuk

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1387 - 1389

7. Spin depolarization in spontaneously polarized low-dimensional systems

   • I. A. Shelykh
   • N. T. Bagraev
   • L. E. Klyachkin

   Low-Dimensional Systems Pages: 1390 - 1399

8. Fabrication and optical properties of photonic crystals based on opal-GaP and opal-GaPN composites

   • G. M. Gadzhiev
   • V. G. Golubev
   • N. V. Sharenkova

   Low-Dimensional Systems Pages: 1400 - 1405

9. Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature

   • A. A. Tonkikh
   • G. E. Tsyrlin
   • P. Werner

   Low-Dimensional Systems Pages: 1406 - 1410

10. Lasing at 1.5 µm in quantum dot structures on GaAs substrates

    • A. E. Zhukov
    • A. P. Vasil’yev
    • Zh. I. Alferov

    Low-Dimensional Systems Pages: 1411 - 1413

11. Properties of GaSb-based light-emitting diodes with chemically cut substrates

    • E. A. Grebenshchikova
    • A. N. Imenkov
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 1414 - 1420

12. MOCVD GaInAsP/GaInP/AlGaInP laser structures emitting at 780 nm

    • D. A. Vinokurov
    • S. A. Zorina
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 1421 - 1424

13. Picosecond high-voltage drift diodes based on gallium arsenide

    • A. V. Rozhkov
    • V. A. Kozlov

    Physics of Semiconductor Devices Pages: 1425 - 1427

14. Impact-ionization wave breakdown and generation of picosecond pulses in the ultrahigh-frequency band in GaAs drift step-recovery diodes

    • V. A. Kozlov
    • A. V. Rozhkov
    • A. F. Kardo-Sysoev

    Physics of Semiconductor Devices Pages: 1428 - 1429

15. Vladimir Idelevich Perel’ (on his 75th birthday)

    • Friends, colleages, and students

    Personalia Pages: 1430 - 1430