Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1−x Gex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4 L. K. OrlovN. L. IvinaA. V. Potapov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1103 - 1108
Hot-electron capture by negatively charged centers in an approximation of quasi-elastic scattering Z. S. KachlishviliN. K. Metreveli Electronic and Optical Properties of Semiconductors Pages: 1109 - 1111
A verification of the applicability of the monovalent-defect model to the description of properties of the vacancy-oxygen complex in silicon L. F. Makarenko Electronic and Optical Properties of Semiconductors Pages: 1112 - 1115
Space-charge-limited currents in a synthetic semiconducting diamond Yu. A. DetchuevV. A. KryachkovN. G. Sanzharlinskii Electronic and Optical Properties of Semiconductors Pages: 1116 - 1119
Optical properties of Ca4Ga2S7:Eu2+ B. G. TagievU. F. KasumovA. S. Abushov Electronic and Optical Properties of Semiconductors Pages: 1120 - 1123
Dielectric properties of Cd1−x FexSe compounds P. V. ŽukowskiJ. PartykaA. Rodzik Electronic and Optical Properties of Semiconductors Pages: 1124 - 1127
Luminescent ZnS:Cu films prepared by chemical methods S. V. SvechnikovL. V. Zav’yalovaYu. A. Tsyrkunov Electronic and Optical Properties of Semiconductors Pages: 1128 - 1132
Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum A. A. LebedevD. V. DavydovE. Janzén Electronic and Optical Properties of Semiconductors Pages: 1133 - 1136
Special features of photoelectric properties of p-CdxHg1−x Te crystals at low temperatures: The effects of the freezing-out of holes and elastic stress S. G. Gasan-ZadeS. V. StaryiG. A. Shepel’skii Electronic and Optical Properties of Semiconductors Pages: 1137 - 1143
Instability of DX-like impurity centers in PbTe:Ga at annealing D. E. DolzhenkoV. N. DeminD. R. Khokhlov Electronic and Optical Properties of Semiconductors Pages: 1144 - 1146
Effect of doping with gadolinium on the physical properties of Hg3In2Te6 O. G. GrushkaP. M. GorleiZ. M. Grushka Electronic and Optical Properties of Semiconductors Pages: 1147 - 1150
Comparison of the polarizations of the 1.2-eV photoluminescence band in n-GaAs:Te under uniaxial pressure and resonance polarized excitation A. A. GutkinM. A. ReshchikovV. E. Sedov Electronic and Optical Properties of Semiconductors Pages: 1151 - 1156
Evolution of the density of states during phase transitions in films of cadmium sulfotellurides synthesized under profoundly nonequilibrium conditions A. P. BelyaevV. P. RubetsM. Yu. Nuzhdin Electronic and Optical Properties of Semiconductors Pages: 1157 - 1160
Band gap estimation for a triaminotrinitrobenzene molecular crystal by the density-functional method K. F. GrebenkinA. L. Kutepov Electronic and Optical Properties of Semiconductors Pages: 1161 - 1162
Static and high-frequency transverse electrical conductivity of isotypical silicon structures obtained by direct bonding V. A. StuchinskiiG. N. Kamaev Semiconductor Structures, Interfaces, and Surfaces Pages: 1163 - 1171
Influence of an electric field on the strained state of a heterostructure R. M. PeleshchakB. A. LukiyanetsG. G. Zegrya Semiconductor Structures, Interfaces, and Surfaces Pages: 1172 - 1176
Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures N. I. BochkarevaS. A. Khorev Semiconductor Structures, Interfaces, and Surfaces Pages: 1177 - 1182
A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics R. B. DzhanelidzeM. B. DzhanelidzeM. R. Katsiashvili Semiconductor Structures, Interfaces, and Surfaces Pages: 1183 - 1185
ZnMgSe/ZnCdSe-based distributed bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates V. I. KozlovskiiP. A. TrubenkoV. V. Roddatis Semiconductor Structures, Interfaces, and Surfaces Pages: 1186 - 1192
On the theory of photoionization of deep-level impurity centers in a parabolic quantum well V. D. KrevchikR. V. ZaitsevV. V. Evstifeev Low-Dimensional Systems Pages: 1193 - 1198
A model of conduction in carbon nanopipe bundles and films V. É. Kaminskii Low-Dimensional Systems Pages: 1199 - 1202
Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide K. S. ZhuravlevA. Yu. Kobitsky Low-Dimensional Systems Pages: 1203 - 1206
Anomalous dispersion, differential gain, and dispersion of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers A. P. BogatovA. E. BoltasevaV. P. Konyaev Physics of Semiconductor Devices Pages: 1207 - 1213
An artificially anisotropic thermoelectric material with semiconducting and superconducting layers D. A. Pshenai-SeverinYu. I. RavichM. V. Vedernikov Physics of Semiconductor Devices Pages: 1214 - 1218
Injection currents in silicon structures with blocked hopping conduction D. G. EsaevS. P. Sinitsa Physics of Semiconductor Devices Pages: 1219 - 1223
Charge transport mechanism and photoelectric characteristics of n +-Si-n-Si-Al2O3-Pd diode structures S. V. SlobodchikovKh. M. SalikhovE. V. Russu Physics of Semiconductor Devices Pages: 1224 - 1228