Distinctive features of the creation of radiation-induced defects in p-Si by photonassisted low-dose ion implantation M. Yu. BarabanenkovA. V. LeonovN. M. Omelyanovskaya Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 821 - 823
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy M. D. VilisovaI. V. IvoninV. V. Chaldyshev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 824 - 829
Band-edge photoluminescence of heavily doped InxGa1−x As1−y Py(λ=1.2 µm) M. V. KarachevtsevaV. A. StrakhovN. G. Yaremenko Electronic and Optical Properties of Semiconductors Pages: 830 - 835
Determining the position of antimony impurity atoms in PbS by 119Sb(119m Sn) emission Mössbauer spectroscopy V. F. MasterovF. S. NasredinovS. I. Bondarevskii Electronic and Optical Properties of Semiconductors Pages: 836 - 837
Intrinsic photoconductivity of copper-doped gallium phosphide N. N. PribylovV. A. BuslovS. A. Sushkov Electronic and Optical Properties of Semiconductors Pages: 838 - 841
Determining the energy levels of elementary primary defects in silicon V. V. Luk’yanitsa Electronic and Optical Properties of Semiconductors Pages: 842 - 844
The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals Z. V. BasheleishviliT. A. Pagava Electronic and Optical Properties of Semiconductors Pages: 845 - 846
Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor N. G. KolinD. I. MerkurisovS. P. Solov’ev Electronic and Optical Properties of Semiconductors Pages: 847 - 849
Avalanche light-emitting diodes operating at room temperature based on single-crystal Si:Ho:O N. A. SobolevA. M. Emel’yanovYu. A. Nikolaev Electronic and Optical Properties of Semiconductors Pages: 850 - 851
Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary E. I. GoldmanA. G. ZhdanG. V. Chucheva Semiconductor Structures, Interfaces and Surfaces Pages: 852 - 857
Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1−xAs/p-AlyGa1−yAs from C-V measurements V. I. ZubkovM. A. Mel’nikF. Bugge Semiconductor Structures, Interfaces and Surfaces Pages: 858 - 861
Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors V. I. ArkhipovV. R. Nikitenko Semiconductor Structures, Interfaces and Surfaces Pages: 862 - 864
Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide E. F. VengerV. V. MileninD. I. Voitsikhovskii Semiconductor Structures, Interfaces and Surfaces Pages: 865 - 869
Photosensitivity of structures produced by heat treatment of CuInSe2 in different media V. Yu. Rud’Yu. V. Rud’ Semiconductor Structures, Interfaces and Surfaces Pages: 870 - 874
Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes A. A. LebedevD. V. DavydovM. L. Korogodskii Semiconductor Structures, Interfaces and Surfaces Pages: 875 - 876
Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures E. I. Gol’dmanA. G. ZhdanG. V. Chucheva Semiconductor Structures, Interfaces and Surfaces Pages: 877 - 882
Transformation of a metal-oxide-silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states G. G. Kareva Low-Dimensional Systems Pages: 883 - 885
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface A. F. Tsatsul’nikovD. A. BedarevM. V. Belousov Low-Dimensional Systems Pages: 886 - 888
Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry S. D. SuchalkinYu. B. Vasil’evP. S. Kop’ev Low-Dimensional Systems Pages: 889 - 891
Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands I. L. DrichkoA. M. D’yakonovA. I. Toropov Low-Dimensional Systems Pages: 892 - 897
New approach to the analysis of negative magnetostriction in two-dimensional structures G. M. Min’kovS. A. NegashevV. M. Danil’tsev Low-Dimensional Systems Pages: 898 - 900
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands B. V. VolovikA. F. Tsatsul’nikovP. Werner Low-Dimensional Systems Pages: 901 - 905
Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field É. N. Voronkov Amorphous, Glassy and Porous Semiconductors Pages: 906 - 910
Multiple bonds in hydrogen-free amorphous silicon A. I. MashinA. F. Khokhlov Amorphous, Glassy and Porous Semiconductors Pages: 911 - 914
Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II) D. G. EsaevS. P. SinitsaE. V. Chernyavskii Amorphous, Glassy and Porous Semiconductors Pages: 915 - 919
Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm N. V. ZotovaS. A. KarandashevG. N. Talalakin The Physics of Semiconductor Devices Pages: 920 - 923
Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions A. P. DanilovaT. N. DanilovaYu. P. Yakovlev The Physics of Semiconductor Devices Pages: 924 - 928
Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures A. R. KovshA. E. ZhukovD. Bimberg The Physics of Semiconductor Devices Pages: 929 - 932
