1. INTAS-RFBR Seminar on rare-earth impurities in semiconductors and low-dimensional semiconductor structures, St. Petersburg State Technical University, October 26, 1998: Opening address

   • B. P. Zakharchenya

   OriginalPaper Pages: 595 - 595

2. Erbium-doped silicon epilayers grown by liquid-phase epitaxy

   • S. Binetti
   • S. Pizzini
   • B. Fraboni

   OriginalPaper Pages: 596 - 597

3. Photoluminescence of erbium-doped silicon: Excitation power dependence

   • C. A. J. Ammerlaan
   • D. T. X. Thao
   • N. A. Sobolev

   OriginalPaper Pages: 598 - 602

4. Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

   • V. V. Emtsev
   • V. V. Emtsev Jr.
   • L. C. Kimerling

   OriginalPaper Pages: 603 - 605

5. Redistribution of erbium during the crystallization of buried amorphous silicon layers

   • O. V. Aleksandrov
   • Yu. A. Nikolaev
   • Yu. A. Kudryavtsev

   OriginalPaper Pages: 606 - 609

6. Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium-and dysprosium-implanted silicon

   • N. A. Sobolev
   • E. I. Shek
   • T. G. Yugova

   OriginalPaper Pages: 610 - 612

7. Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures

   • N. A. Sobolev
   • Yu. A. Nikolaev
   • V. I. Vdovin

   OriginalPaper Pages: 613 - 615

8. Mechanisms of excitation of the f-f emission in silicon codoped with erbium and oxygen

   • V. F. Masterov
   • L. G. Gerchikov

   OriginalPaper Pages: 616 - 621

9. Mechanism of erbium electroluminescence in hydrogenated amorph silicon

   • M. S. Bresler
   • O. B. Gusev
   • I. N. Yassievich

   OriginalPaper Pages: 622 - 623

10. Effect of annealing on the optical and structural properties of GaN:Er

    • N. A. Sobolev
    • V. V. Lundin
    • A. M. Emel’yanov

    OriginalPaper Pages: 624 - 626

11. Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures

    • A. A. Gippius
    • V. M. Konnov
    • V. V. Ushakov

    OriginalPaper Pages: 627 - 629

12. Photothermoacoustic and photoelectric microscopy of silicon

    • R. M. Burbelo
    • A. G. Kuz’mich
    • I. Ya. Kucherov

    Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 630 - 635

13. Radiation-thermal activation of silicon implanted in gallium arsenide

    • V. M. Ardyshev
    • A. P. Surzhikov

    Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 636 - 639

14. Photoionization of short-range acceptor states in uniaxially deformed semiconductors

    • A. A. Abramov
    • V. N. Tulupenko
    • D. A. Firsov

    Electronic and Optical Properties of Semiconductors Pages: 640 - 644

15. Electric and luminescence properties of GaAs-A^IIB^IVC ₂ ^V single crystals

    • I. K. Polushina
    • Yu. V. Rud’
    • V. Yu. Rud’

    Electronic and Optical Properties of Semiconductors Pages: 645 - 647

16. Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors

    • I. I. Lyapilin
    • Kh. M. Bikkin

    Electronic and Optical Properties of Semiconductors Pages: 648 - 653

17. Scanning tunneling microscopy investigation of the microtopography of SiO₂ and Si surfaces at the Si/SiO₂ interface in SIMOX structures

    • D. V. Vyalykh
    • S. I. Fedoseenko

    Semiconductor Structures, Interfaces and Surfaces Pages: 654 - 657

18. Reconstruction and electron states of a Ga₂Se₃-GaAs heterointerface

    • B. L. Agapov
    • N. N. Bezryadin
    • I. N. Arsent’ev

    Semiconductor Structures, Interfaces and Surfaces Pages: 658 - 661

19. Sulfide passivation of GaAs power diodes

    • V. M. Botnaryuk
    • Yu. V. Zhilyaev
    • E. V. Konenkova

    Semiconductor Structures, Interfaces and Surfaces Pages: 662 - 664

20. Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor

    • N. N. Bezryadin
    • É. P. Domashevskaya
    • I. N. Arsent’ev

    Semiconductor Structures, Interfaces and Surfaces Pages: 665 - 667

21. Deep-level recombination spectroscopy in GaP light-emitting diodes

    • S. V. Bulyarskii
    • M. O. Vorob’ev
    • A. V. Lakalin

    Semiconductor Structures, Interfaces and Surfaces Pages: 668 - 671

22. Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures

    • M. V. Belous
    • A. M. Genkin
    • V. K. Genkina

    Semiconductor Structures, Interfaces and Surfaces Pages: 672 - 676

23. Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy

    • G. É. Tsyrlin
    • V. N. Petrov
    • A. O. Golubok

    Low-Dimensional Systems Pages: 677 - 680

24. Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition

    • V. F. Sapega
    • V. I. Perel’
    • K. Eberl

    Low-Dimensional Systems Pages: 681 - 683

25. Effect of substrate material on the rate of growth and the optical parameters of a-C:H layers

    • T. K. Zvonareva
    • L. V. Sharonova

    Amorphous, Glassy, and Porous Semiconductors Pages: 684 - 688

26. Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light

    • V. Yu. Rud’
    • Yu. V. Rud’
    • V. P. Khvostikov

    The Physics of Semiconductor Devices Pages: 689 - 692

27. Increasing the power of broad-waveguide lasers by additional selection of transverse modes

    • I. A. Kostko
    • V. P. Evtikhiev
    • G. G. Zegrya

    The Physics of Semiconductor Devices Pages: 693 - 699

28. Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

    • M. Aidaraliev
    • N. V. Zotova
    • G. N. Talalakin

    The Physics of Semiconductor Devices Pages: 700 - 703

29. In Memory of Vadim Fedorovich Masterov

    Personalia Pages: 704 - 705