1. Induced photopleochroism in semiconductors Review

   • F. P. Kesamanly
   • V. Yu. Rud’
   • Yu. V. Rud’

   Review Pages: 483 - 503

2. Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects

   • M. Yu. Barabanenkov
   • A. V. Leonov
   • N. M. Omel’yanovskaya

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 504 - 507

3. Effect of the irradiation intensity on the efficiency of the production radiation defects in n-and p-type Si crystals

   • T. A. Pagava
   • Z. V. Basheleishvili

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 508 - 509

4. Spontaneously forming periodic composition-modulated InGaAsP structures

   • N. A. Bert
   • L. S. Vavilova
   • V. A. Shchukin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 510 - 513

5. Absorption of infrared radiation by free charge carriers in n-type Cd_1−x Zn_xTe

   • A. I. Belogorokhov
   • A. G. Belov
   • L. I. Belogorokhova

   Electronic and Optical Properties of Semiconductors Pages: 514 - 517

6. Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them

   • G. A. Il’chuk
   • N. A. Ukrainets
   • V. Yu. Rud’

   Electronic and Optical Properties of Semiconductors Pages: 518 - 522

7. Photoluminescence of Si₃N₄ films implanted with Ge⁺ and Ar⁺ ions

   • I. E. Tyschenko
   • V. A. Volodin
   • V. Skorupa

   Electronic and Optical Properties of Semiconductors Pages: 523 - 528

8. Slow photoconductivity relaxation due to radiation defects in p-type Si

   • S. E. Mal’khanov

   Electronic and Optical Properties of Semiconductors Pages: 529 - 530

9. Dependence of the properties of Cd_1−x Zn_xTe crystals on the type of intrinsic point defect formed by oxygen

   • N. K. Morozova
   • I. A. Karetnikov
   • V. S. Zimogorskii

   Electronic and Optical Properties of Semiconductors Pages: 531 - 535

10. Low-temperature anomalies exhibited by the photoelectromagnetic effect in p-type Cd_xHg_1−x Te

    • S. G. Gasan-zade
    • M. V. Strikha
    • G. A. Shepelskii

    Electronic and Optical Properties of Semiconductors Pages: 536 - 540

11. The effect of fields due to charge centers at random locations in a semiconductor crystal on the electronic structure of neutral acceptors and on the polarization of luminescence generated by 〈conduction band〉-acceptor transitions

    • E. B. Osipov
    • O. V. Voronov
    • B. V. Borisov

    Electronic and Optical Properties of Semiconductors Pages: 541 - 543

12. The effect of intense laser light on the absorption-edge region of the spectrum of a CdCr₂Se₄ ferromagnetic semiconductor

    • L. L. Golik
    • Z. É. Kun’kova

    Electronic and Optical Properties of Semiconductors Pages: 544 - 546

13. Saturated vertical drift velocity of electrons in silicon carbide polytypes

    • V. I. Sankin
    • A. A. Lepneva

    Semiconductor Structures, Interfaces and Surfaces Pages: 547 - 550

14. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts

    • A. A. Verevkin
    • N. G. Ptitsina
    • K. S. Yngvesson

    Semiconductor Structures, Interfaces and Surfaces Pages: 551 - 554

15. Nanorelief of an oxidized cleaved surface of a grid of alternating Ga_0.7Al_0.3As and GaAs heterolayers

    • A. V. Ankudinov
    • V. P. Evtikhiev
    • A. N. Titkov

    Semiconductor Structures, Interfaces and Surfaces Pages: 555 - 558

16. Spectrum and electron-phonon interaction in a medium with a cylindrical quantum wire

    • N. V. Tkach
    • V. P. Zharkoi

    Low-Dimensional Systems Pages: 559 - 563

17. Electron and hole spectra in a superlattice of cylindrical quantum wires

    • V. M. Golovach
    • G. G. Zegrya
    • N. V. Tkach

    Low-Dimensional Systems Pages: 564 - 568

18. Vibrational spectra of erbium-and copper-modified hydrogenated amorphous carbon

    • V. I. Ivanov-Omskii
    • A. A. Andreev
    • G. S. Frolova

    Amorphous, Glassy and Porous Semiconductors Pages: 569 - 573

19. Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity

    • D. G. Esaev
    • S. P. Sinitsa
    • E. V. Chernyavskii

    The Physics of Semiconductor Devices Pages: 574 - 577

20. D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel

    • M. V. Cheremisin
    • G. G. Samsonidze

    The Physics of Semiconductor Devices Pages: 578 - 585

21. InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm

    • N. A. Maleev
    • A. E. Zhukov
    • D. Bimberg

    The Physics of Semiconductor Devices Pages: 586 - 589

22. Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry

    • V. P. Evtikhiev
    • E. Yu. Kotel’nikov
    • N. N. Faleev

    The Physics of Semiconductor Devices Pages: 590 - 593