Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy A. Yu. AndreevB. A. AndreevH. Hutter Electronic and Optical Properties of Semiconductors Pages: 131 - 134
Evidence for ɛ 2-conductivity in the magnetoresistance of multivalley semiconductors N. V. AgrinskayaV. I. KozubA. S. Saidov Electronic and Optical Properties of Semiconductors Pages: 135 - 142
Hot-carrier far infrared emission in silicon L. A. KosyachenkoM. P. Mazur Electronic and Optical Properties of Semiconductors Pages: 143 - 146
Bragg reflectors for cylindrical waves V. V. NikolaevG. S. SokolovskiiM. A. Kaliteevskii Semiconductor Structures, Interfaces and Surfaces Pages: 147 - 152
Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates A. E. ZhukovA. R. KovshZh. I. Alferov Low-Dimensional Systems Pages: 153 - 156
Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures M. M. SobolevA. R. KovshYu. G. Musikhin Low-Dimensional Systems Pages: 157 - 164
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix A. E. ZhukovA. Yu. EgorovZh. I. Alferov Low-Dimensional Systems Pages: 165 - 168
Optical properties of porous silicon layers processed with a HF:HCI:C2H5OH electrolyte A. I. BelogorokhovL. I. Belogorokhova Amorphous, Glassy and Porous Semiconductors Pages: 169 - 174
Conductivity of structures based on doped nanocrystalline SnO2 films with gold contacts B. A. AkimovA. M. Gas’kovA. Tadeev Amorphous, Glassy and Porous Semiconductors Pages: 175 - 176
Influence of the substrate temperature and annealing on the 1.54-µm erbium photoluminescence of a-Si:H films obtained using a glow discharge E. I. TerukovO. I. Kon’kovH. Kuehne Amorphous, Glassy and Porous Semiconductors Pages: 177 - 179
Transport properties and photosensitivity of metal/porous-silicon/c-Si structures D. G. Yarkin Semiconductor Structures, Interfaces and Surfaces Pages: 180 - 183
Gain in injection lasers based on self-organized quantum dots A. R. KovshA. E. ZhukovP. S. Kop’ev Physics of Semiconductor Devices Pages: 184 - 191
Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation A. N. KovalevF. I. ManyakhinA. É. Yunovich Physics of Semiconductor Devices Pages: 192 - 199
Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-µm spectral range M. AidaralievN. V. ZotovaG. N. Talalakin Physics of Semiconductor Devices Pages: 200 - 205
High-power light-emitting diodes operating in the 1.9 to 2.1-µm spectral range T. N. DanilovaB. E. ZhurtanovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 206 - 209
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 µm) due to nonlinear optical effects A. P. DanilovaT. N. DanilovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 210 - 215
Long-wavelength photodiodes based on Ga1−x InxAsySb1−y wit composition near the miscibility boundary I. A. AndreevE. V. KunitsynaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 216 - 220
Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484–487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GAas [Semiconductors 32, 479–483 (May 1998)] I. L. BronevoiA. N. Krivonosov Erratum Pages: 221 - 221
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)] N. I. KatsavetsG. M. LawsC. T. Foxon Erratum Pages: 222 - 222
