Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution T. I. VoroninaT. S. LagunovaYu. P. Yakovlev OriginalPaper Pages: 763 - 767
Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams G. É. TsyrlinV. N. PetrovN. N. Ledentsov OriginalPaper Pages: 768 - 772
Two sources of excitation of photoluminescence of porous silicon N. E. KorsunskayaT. V. TorchinskayB. M. Bulakh OriginalPaper Pages: 773 - 776
Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy G. É. TsyrlinV. N. PetrovN. N. Ledentsov OriginalPaper Pages: 777 - 780
Hall effect in quasi-two-dimensional superlattices in nonquantizing magnetic and strong electric fields G. M. ShmelevÉ. M. ÉpshteinI. I. Maglevannyi OriginalPaper Pages: 781 - 783
Nonstationary thermoelectric power in multilayered structures with p-n junctions V. N. Agarev OriginalPaper Pages: 784 - 785
Si/Si1−x Gex epitaxial layers and superlattices. Growth and structural characteristics F. F. SizovV. P. Klad’koV. M. Ogenko OriginalPaper Pages: 786 - 788
Simple method for reconstructing the doping fine structure in semiconductors from C–V measurements in an electrolytic cell V. I. ShashkinI. R. KaretnikovaI. A. Shereshevskii OriginalPaper Pages: 789 - 792
Effect of pulsed laser irradiation on the optical characteristics and photoconductivity of the solid solutions CdHgTe L. A. Golovan’P. K. KashkarovV. M. Lakeenkov OriginalPaper Pages: 793 - 796
Effect of an electric field on the relaxation of photoconductivity in n-Hg0.8Cd0.2Te crystals I. S. Virt OriginalPaper Pages: 797 - 799
Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells M. V. MaksimovI. L. KrestnikovS. V. Sorokin OriginalPaper Pages: 800 - 803
Calculation of the trapping of hot electrons by repulsive centers under the conditions of a needle-type distribution function Kh. Z. KachlishviliZ. S. KachlishviliF. G. Chumburidze OriginalPaper Pages: 804 - 805
Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt A. E. KunitsynV. V. ChaldyshevM. G. Mil’vidskii OriginalPaper Pages: 806 - 808
Dependence of the resonant conductivity of symmetric double-barrier structures on the amplitude of rf field E. I. GolantA. B. Pashkovskii OriginalPaper Pages: 809 - 812
Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight K. M. Doshchanov OriginalPaper Pages: 813 - 814
Total external x-ray reflection and infrared spectroscopy study of porous silicon and its aging L. A. BalagurovV. F. PavlovG. P. Boronina OriginalPaper Pages: 815 - 818
Calculation of 2p levels for thermal double donors in silicon L. F. Makarenko OriginalPaper Pages: 819 - 822
Conductivity stimulated by temperature oscillations in dissociated cadmium telluride and cadmium sulfide solid solutions A. P. BelyaevV. P. RubetsI. P. Kalinkin OriginalPaper Pages: 823 - 825
Intrinsic photoconductivity in chromium disilicide epitaxial thin films N. G. GalkinA. V. KonchenkoA. M. Maslov OriginalPaper Pages: 826 - 828
Enhancement of the photovoltaic effect in a two-dimensionally disordered medium M. V. Éntin OriginalPaper Pages: 829 - 830
InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm T. N. DanilovaA. P. DanilovaYu. P. Yakovlev OriginalPaper Pages: 831 - 834
Electron-probe microanalysis of doped PbTe and Pb0.8Sn0.2Te single crystals M. V. BestaevA. I. GorelikYu. M. Tairov OriginalPaper Pages: 835 - 837
Steady-state lux-ampere characteristics of compensated crystals at various excitation intensities A. A. Lebedev OriginalPaper Pages: 838 - 840
Evolution of static negative differential conductivity in Ga1−x AlxAs as a function of the transverse magnetic field and the composition of the solid solution G. É. DzamukashviliZ. S. KachlishviliN. K. Metreveli OriginalPaper Pages: 841 - 843
Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power Yu. B. GrekovT. A. ShlyakhovN. A. Semikolenova OriginalPaper Pages: 844 - 846
Nature of E c −0.37 eV centers and the formation of high-resistivity layers in n-type silicon O. V. NaumovaL. S. SmirnovV. F. Stas’ OriginalPaper Pages: 847 - 851
Formation of oxygen precipitates in silicon I. V. AntonovaV. P. PopovA. Misiuk OriginalPaper Pages: 852 - 856
Transient photoelectric effect in pure, high-resistivity, highly biased metal-semiconductor and metal-insulator-semiconductor structures B. I. Reznikov OriginalPaper Pages: 857 - 863
Injection currents in mixed-layer Ga0.5In1.5S3 single crystals I. M. AskerovF. Yu. Asadov OriginalPaper Pages: 864 - 865
Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals G. E. DavidyukN. S. BogdanyukA. A. Fedonyuk OriginalPaper Pages: 866 - 868
Acceptors in Cd1−x MnxTe (x<0.1) A. I. VlasenkoV. N. BabentsovV. L. Shlyakhovyi OriginalPaper Pages: 869 - 871
Energy spectrum of n-type Pb1−x SnxTe (x=0.22) bombarded by neutrons E. P. SkipetrovA. N. NekrasovaA. V. Ryazanov OriginalPaper Pages: 872 - 874