1. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

   • S. Kozyukhin
   • R. Golovchak
   • H. Jain

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 16 April 2011 Pages: 423 - 426

2. States of antimony and tin atoms in lead chalcogenides

   • G. A. Bordovsky
   • S. A. Nemov
   • P. P. Seregin

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 16 April 2011 Pages: 427 - 430

3. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

   • Yu. B. Samsonenko
   • G. E. Cirlin
   • P. Werner

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 16 April 2011 Pages: 431 - 435

4. Minority-charge-carrier mobility at low injection level in semiconductors

   • L. I. Pomortseva

   Electronic Properties of Semiconductors 16 April 2011 Pages: 436 - 444

5. Transmittance spectra of the CuGa₃Se₅ ternary compound near the fundamental absorption edge

   • I. V. Bodnar

   Electronic Properties of Semiconductors 16 April 2011 Pages: 445 - 448

6. Galvanomagnetic phenomena in a longitudinal autosoliton in p-InSb in transverse and longitudinal magnetic fields

   • I. K. Kamilov
   • A. A. Stepurenko
   • A. E. Gummetov

   Electronic Properties of Semiconductors 16 April 2011 Pages: 449 - 453

7. Modification of the structural lattice parameters and electron spectra of n-GaAs films on sapphire on irradiation with reactor neutrons

   • V. N. Brudnyi
   • A. V. Kosobutsky
   • A. V. Korulin

   Spectroscopy, Interaction with Radiation 16 April 2011 Pages: 454 - 460

8. Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties

   • V. Yu. Rud’
   • Yu. V. Rud’
   • E. I. Terukov

   Surfaces, Interfaces, and Thin Films 16 April 2011 Pages: 461 - 466

9. A model of formation of fixed charge in thermal silicon dioxide

   • O. V. Aleksandrov
   • A. I. Dus’

   Surfaces, Interfaces, and Thin Films 16 April 2011 Pages: 467 - 473

10. Percolation and excitonic luminescence in SiO₂/ZnO two-phase structures with a high density of quantum dots randomly distributed over a spherical surface

    • N. V. Bondar

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2011 Pages: 474 - 480

11. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al _x Ga_{1 − x} As:Si/GaAs(100) heterostructures

    • P. V. Seredin
    • A. V. Glotov
    • I. S. Tarasov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 April 2011 Pages: 481 - 492

12. Absorption and spectra of optical parameters in amorphous solid solutions of the Se-S system

    • N. Z. Djalilov
    • G. M. Damirov

    Amorphous, Vitreous, and Organic Semiconductors 16 April 2011 Pages: 493 - 498

13. Impact of the sample thickness and γ-irradiation dose on the occurrence of radiation-induced optical effects in chalcogenide vitreous semiconductors of the Ge-Sb-S system

    • T. S. Kavetskyy

    Amorphous, Vitreous, and Organic Semiconductors 16 April 2011 Pages: 499 - 502

14. Conductivity photoquenching effect in polymer–ferrocene composites

    • M. A. Kurbanov
    • G. Z. Suleymanov
    • Z. M. Mamedova

    Amorphous, Vitreous, and Organic Semiconductors 16 April 2011 Pages: 503 - 509

15. Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane–hydrogen mixture

    • A. G. Kazanskii
    • E. I. Terukov
    • M. V. Khenkin

    Amorphous, Vitreous, and Organic Semiconductors 16 April 2011 Pages: 510 - 514

16. GaAs–AlGaAs heterostructure thyristors with completely optical transfer of emitter current

    • V. G. Danil’chenko
    • V. I. Korol’kov
    • F. Yu. Soldatenkov

    Physics of Semiconductor Devices 16 April 2011 Pages: 515 - 518

17. Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

    • A. A. Marmalyuk
    • E. I. Davydova
    • I. S. Tarasov

    Physics of Semiconductor Devices 16 April 2011 Pages: 519 - 525

18. Passivation of infrared photodiodes with alcoholic sulfide solution

    • M. V. Lebedev
    • V. V. Sherstnev
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 16 April 2011 Pages: 526 - 529

19. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

    • A. E. Zhukov
    • N. V. Kryzhanovskaya
    • L. V. Asryan

    Physics of Semiconductor Devices 16 April 2011 Pages: 530 - 535

20. Potential distribution in voltage terminating structures with floating p–n junction rings of silicon radiation detectors

    • E. V. Verbitskaya
    • V. K. Eremin
    • K. A. Konkov

    Physics of Semiconductor Devices 16 April 2011 Pages: 536 - 542

21. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

    • N. V. Zotova
    • S. A. Karandashev
    • N. M. Stus’

    Physics of Semiconductor Devices 16 April 2011 Pages: 543 - 549

22. A temperature-stable semiconductor laser based on coupled waveguides

    • A. V. Savelyev
    • I. I. Novikov
    • N. N. Ledentsov

    Physics of Semiconductor Devices 16 April 2011 Pages: 550 - 556

23. Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface

    • L. K. Orlov
    • S. V. Ivin

    Fabrication, Treatment, and Testing of Materials and Structures 16 April 2011 Pages: 557 - 566