1. Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice

   • T. V. Bez’yazychnaya
   • V. M. Zelenkovskii
   • G. I. Ryabtsev

   Atomic Structure and Nonelectronic Properties of Semiconductors 25 January 2009 Pages: 1255 - 1258

2. Deposition-rate dependence of the height of GaAs-nanowires

   • N. V. Sibirev
   • V. G. Dubrovskii
   • V. M. Ustinov

   Atomic Structure and Nonelectronic Properties of Semiconductors 25 January 2009 Pages: 1259 - 1263

3. Electrical properties, photoconductivity, and photoluminescence of coarse-grained p-ZnTe

   • Yu. V. Klevkov
   • S. A. Kolosov
   • S. N. Nikolaev

   Electronic and Optical Properties of Semiconductors 25 January 2009 Pages: 1264 - 1269

4. Energy spectrum of charge carriers in Ag₂Te

   • F. F. Aliev
   • M. B. Jafarov

   Electronic and Optical Properties of Semiconductors 25 January 2009 Pages: 1270 - 1273

5. Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines

   • A. I. Veinger
   • A. G. Zabrodskii
   • S. I. Goloshchapov

   Electronic and Optical Properties of Semiconductors 25 January 2009 Pages: 1274 - 1281

6. Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions

   • A. P. Belyaev
   • V. P. Rubets
   • V. V. Grishin

   Electronic and Optical Properties of Semiconductors 25 January 2009 Pages: 1282 - 1285

7. Formation of ohmic contacts to low-resistivity Cd_{1 − x} Mg _x Te alloys for photovolatic applications

   • O. A. Parfenyuk
   • M. I. Ilashchuk
   • K. S. Ulyanitsky

   Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1286 - 1288

8. Role of spontaneous polarization in the formation of NH-SiC/3C-SiC/NH-SiC structures based on silicon carbide polytypes

   • S. Yu. Davydov
   • A. V. Troshin

   Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1289 - 1291

9. Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons

   • Z. D. Kovalyuk
   • O. A. Politanska
   • V. T. Maslyuk

   Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1292 - 1297

10. Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

    • A. V. Voitsekhovskii
    • S. N. Nesmelov
    • V. V. Vasiliev

    Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1298 - 1303

11. Static current-voltage characteristics of Au/CaF₂/n-Si(111) MIS tunneling structures

    • S. M. Suturin
    • A. G. Banshchikov
    • M. I. Vexler

    Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1304 - 1308

12. Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts

    • V. I. Shashkin
    • N. V. Vostokov

    Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1309 - 1314

13. Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration

    • V. N. Bessolov
    • T. V. Blank
    • E. A. Posse

    Semiconductor Structures, Interfaces, and Surfaces 25 January 2009 Pages: 1315 - 1317

14. Magnetooptical properties of a single CdMnSe/CdMgSe quantum well

    • I. I. Reshina
    • S. V. Ivanov

    Low-Dimensional Systems 25 January 2009 Pages: 1318 - 1322

15. Properties and structure of (As₂Se₃)_{1 − z} (SnSe₂) _{z − x} (Tl₂Se) _x and (As₂Se₃)_{1 − z} (SnSe) _{z − x} (Tl₂Se) _x glasses

    • G. A. Bordovsky
    • A. V. Marchenko
    • T. V. Likhodeeva

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 25 January 2009 Pages: 1323 - 1326

16. Effect of electric field in the course of obtaining a-SiO _x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

    • Yu. K. Undalov
    • E. I. Terukov
    • I. N. Trapeznikova

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 25 January 2009 Pages: 1327 - 1333

17. Specific features of light current-voltage characteristics of p-i-n structures based on amorphous silicon in the case of the tunnel-drift mechanism of dark current transport

    • A. A. Andreev

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 25 January 2009 Pages: 1334 - 1337

18. Photosensitive properties of metal-containing polydisalicylidene azomethines

    • E. L. Alexandrova
    • A. G. Ivanov
    • V. V. Shamanin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 25 January 2009 Pages: 1338 - 1341

19. Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In_0.2Ga_0.8N/GaN quantum wells

    • Yu. S. Lelikov
    • N. I. Bochkareva
    • Yu. G. Shreter

    Physics of Semiconductor Devices 25 January 2009 Pages: 1342 - 1345

20. Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80–300 K

    • A. M. Emel’yanov

    Physics of Semiconductor Devices 25 January 2009 Pages: 1346 - 1350

21. Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge

    • E. A. Bobrova
    • N. M. Omeljanovskaya

    Physics of Semiconductor Devices 25 January 2009 Pages: 1351 - 1354

22. Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities

    • N. I. Bochkareva
    • R. I. Gorbunov
    • Yu. G. Shreter

    Physics of Semiconductor Devices 25 January 2009 Pages: 1355 - 1361

23. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    • P. G. Kasherininov
    • A. A. Tomasov

    Physics of Semiconductor Devices 25 January 2009 Pages: 1362 - 1369

24. Model of thermal oxidation of silicon at the volume-reaction front

    • O. V. Aleksandrov
    • A. I. Dusj

    Fabrication, Treatment, and Testing of Materials and Structures 25 January 2009 Pages: 1370 - 1376