1. Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons

   • D. B. Él’murotova
   • É. M. Ibragimova

   Electronic and Optical Properties of Semiconductors Pages: 1135 - 1139

2. Effect of copper doping on kinetic phenomena in n-Bi₂Te_2.85Se_0.15

   • M. K. Zhitinskaya
   • S. A. Nemov
   • T. E. Svechnikova

   Electronic and Optical Properties of Semiconductors Pages: 1140 - 1144

3. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

   • P. B. Parchinskiy
   • A. Yu. Bobylev
   • Do Jin Kim

   Electronic and Optical Properties of Semiconductors Pages: 1145 - 1149

4. Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

   • N. T. Gurin
   • O. Yu. Sabitov
   • A. M. Afanas’ev

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1150 - 1159

5. Effect of slow electrons on the field dependences of the Hall coefficient for Cd _x Hg_{1 − x} Te alloys at T = 77 K

   • A. G. Belov
   • I. M. Belova
   • A. A. Shlenskiĭ

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1160 - 1164

6. Conduction mechanisms in silicon-polymer-metal heterostructures

   • R. B. Salikhov
   • A. N. Lachinov
   • R. G. Rakhmeev

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1165 - 1169

7. Fabrication and properties of point structures formed on n-InSe single crystals

   • G. A. Il’chuk
   • V. V. Kus’nézh
   • V. O. Ukrainets

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1170 - 1172

8. Photosensitivity of the structures on the Cu(In,Ga)(S,Se)₂ films obtained by thermal treatment in the S and Se vapors

   • V. Yu. Rud’
   • M. S. Tivanov
   • P. I. Romanov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1173 - 1177

9. Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi_{1 − x} Sb _x (0.06 ≤ x ≤ 0.20)

   • A. E. Georgitsé
   • V. I. Ivanov-Omskiĭ
   • I. T. Postolaki

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1178 - 1180

10. Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

    • S. É. Tyaginov
    • M. I. Vexler
    • V. Zaporojtchenko

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1181 - 1184

11. Effect of energy band bending on non-steady-state Dember EMF in bipolar semiconductors

    • A. Konin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1185 - 1188

12. Anomalous dependences of the diode barrier capacitance on bias voltage and temperature

    • V. I. Murygin
    • A. U. Fattakhdinov
    • V. B. Gundyrev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1189 - 1196

13. Experimental investigation of effect of aromatic hydrocarbons on resistivity of indium selenide

    • S. I. Drapak
    • Z. D. Kovalyuk

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1197 - 1200

14. Relaxation of photodielectric effect in Pb₃O₄ layers

    • V. T. Avanesyan
    • E. P. Baranova

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1201 - 1203

15. Optical properties of organic semiconductors based on erbium phthalocyanine complexes in the mid- and near-infrared spectral regions

    • I. A. Belogorokhov
    • E. V. Tikhonov
    • D. R. Khokhlov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1204 - 1208

16. A multifrequency interband two-cascade laser

    • A. A. Biryukov
    • B. N. Zvonkov
    • Vl. V. Kocharovsky

    Physics of Semiconductor Devices Pages: 1209 - 1213

17. Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts

    • A. V. Sachenko
    • A. P. Gorban
    • I. O. Sokolovskyi

    Physics of Semiconductor Devices Pages: 1214 - 1223

18. The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    • A. G. Kuzmenkov
    • S. A. Blokhin
    • J. Y. Chi

    Physics of Semiconductor Devices Pages: 1224 - 1229

19. Double-band generation in quantum-well semiconductor laser at high injection levels

    • D. A. Vinokurov
    • S. A. Zorina
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 1230 - 1233

20. Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant

    • Yu. B. Bolkhovityanov
    • A. S. Deryabin
    • L. V. Sokolov

    Fabrication, Treatment, and Testing of Materials and Structures Pages: 1234 - 1239

21. Nucleation at the lateral surface and the shape of whisker nanocrystals

    • V. G. Dubrovskiĭ
    • N. V. Sibirev
    • J. C. Harmand

    Fabrication, Treatment, and Testing of Materials and Structures Pages: 1240 - 1247

22. Effect of chemical treatment on photoluminescence spectra of SiO _x layers with built-in Si nanocrystals

    • I. Z. Indutnyy
    • I. Yu. Maĭdanchuk
    • V. A. Dan’ko

    Fabrication, Treatment, and Testing of Materials and Structures Pages: 1248 - 1254

23. Defects of the structure of semiconductor superlattices grown on the basis of II–VI alloys

    • G. F. Kuznetsov

    Fabrication, Treatment, and Testing of Materials and Structures Pages: 1255 - 1262