1. Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defects

   • V. V. Bolotov
   • G. N. Kamaev
   • L. S. Smirnov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 363 - 366

2. Ultrasonically stimulated low-temperature redistribution of impurities in silicon

   • I. V. Ostrovskii
   • A. B. Nadtochii
   • A. A. Podolyan

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 367 - 369

3. Simulation of low-temperature arsenic diffusion from a heavily doped silicon layer

   • O. V. Aleksandrov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 370 - 374

4. Generalized character of the dielectric response of CdTe crystals grown from the melt

   • I. A. Klimenko
   • V. P. Migal’

   Electronic and Optical Properties of Semiconductors Pages: 375 - 378

5. Effect of the radial electric field on absorption in a quantized spherical layer

   • V. A. Arutyunyan

   Electronic and Optical Properties of Semiconductors Pages: 379 - 381

6. Photoelectric C-V profiling of majority charge carriers and effective lifetimes of minority charge carriers in gettered GaAs wafers

   • V. F. Andrievskii
   • A. T. Gorelenok
   • N. M. Shmidt

   Electronic and Optical Properties of Semiconductors Pages: 382 - 384

7. Effective electron mass in heavily doped GaAs in the ordering of impurity complexes

   • V. A. Bogdanova
   • N. A. Davletkil’deev
   • E. N. Sidorov

   Electronic and Optical Properties of Semiconductors Pages: 385 - 389

8. Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

   • O. Yu. Shevchenko
   • V. F. Radantsev
   • A. D. Perepelkin

   Electronic and Optical Properties of Semiconductors Pages: 390 - 393

9. Energy transfer of Ce³⁺ → Eu²⁺ in the CaGa₂S₄ compound

   • R. B. Dzhabbarov

   Electronic and Optical Properties of Semiconductors Pages: 394 - 397

10. Features of optical properties of Al_xGa_1−x N solid solutions

    • V. G. Deibuk
    • A. V. Voznyi
    • M. M. Sletov

    Electronic and Optical Properties of Semiconductors Pages: 398 - 403

11. Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors

    • S. G. Gasan-zade
    • M. V. Strikha
    • V. A. Boiko

    Electronic and Optical Properties of Semiconductors Pages: 404 - 409

12. Analysis and refinement of mathematical tools for modified time-of-flight method

    • S. P. Vikhrov
    • N. V. Vishnyakov
    • V. G. Mishustin

    Electronic and Optical Properties of Semiconductors Pages: 410 - 413

13. Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n ⁺-GaAs Schottky barrier on hydrogenation

    • N. A. Torkhov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 414 - 419

14. Field effect in a system consisting of electrolyte and (TlBiSe₂)_1−x -(TlBiS₂)_x solid solution

    • O. Yu. Shevchenko
    • A. M. Yafyasov
    • A. D. Perepelkin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 420 - 423

15. Effect of surface on the excitonic characteristics of semiconductors

    • V. G. Litovchenko
    • N. L. Dmitruk
    • A. V. Sarikov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 424 - 429

16. Nature of the edge electroluminescence peak in the Si:(Er,O) diode breakdown mode

    • A. M. Emel’yanov
    • Yu. A. Nikolaev
    • N. A. Sobolev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 430 - 433

17. Control of the interband and intersubband transition energy in quantum wells using localized isoelectronic perturbations

    • K. Durinyan
    • A. Zatikyan
    • S. Petrosyan

    Low-Dimensional Systems Pages: 434 - 438

18. Quantized conductance in silicon quantum wires

    • N. T. Bagraev
    • A. D. Buravlev
    • I. A. Shelykh

    Low-Dimensional Systems Pages: 439 - 460

19. Exciton recombination in δ-doped type-II GaAs/AlAs superlattices

    • K. S. Zhuravlev
    • A. K. Sulaimanov
    • A. K. Bakarov

    Low-Dimensional Systems Pages: 461 - 465

20. The effect of adsorption on the electrical properties of structures based on oxidized porous silicon

    • D. I. Bilenko
    • O. Ya. Belobrovaya
    • E. I. Khasina

    Amorphous, Vitreous, and Porous Semiconductors Pages: 466 - 471

21. Special features of electron drift in submicrometer GaAs structures

    • V. A. Gergel’
    • E. Yu. Kul’kova
    • G. Yu. Khrenov

    Physics of Semiconductor Devices Pages: 472 - 475

22. Long-term variation of electrical and photoelectric characteristics of Pd-p-InP diode structures

    • S. V. Slobodchikov
    • Kh. M. Salikhov
    • E. V. Russu

    Physics of Semiconductor Devices Pages: 476 - 479