Modeling the hydrogen distribution accompanying electron injection in SiO2 films in strong electric fields G. V. Gadiyak OriginalPaper Pages: 207 - 213
Effect of electron irradiation on the electrical properties of n-type Pb1−x SnxTe (x⋍2) alloys E. P. SkipetrovA. N. Nekrasova OriginalPaper Pages: 214 - 217
Transport phenomena in n-MnxHg1−x Te/Cd0.96Zn0.04Te epitaxial films G. V. BeketovA. E. BelyaevS. M. Komirenko OriginalPaper Pages: 218 - 221
Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1−x Six heterostructures Yu. G. ArapovN. A. GorodilovN. G. Shelushinina OriginalPaper Pages: 222 - 227
Defects in intrinsic and pseudodoped amorphous hydrated silicon O. A. Golikova OriginalPaper Pages: 228 - 231
Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates A. N. AndreevN. Yu. SmirnovaV. E. Chelnokov OriginalPaper Pages: 232 - 236
Structure and electrical conductivity of polycrystalline silicon films grown by molecularbeam deposition accompanied by low-energy ion bombardment of the growth surface D. A. PavlovA. F. KhokhlovV. G. Shengurov OriginalPaper Pages: 237 - 240
Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity M. V. Cheremisin OriginalPaper Pages: 241 - 245
Binding energy of shallow donors in asymmetrical systems of quantum wells V. I. BelyavskiiM. V. Gol’dfarbYu. V. Kopaev OriginalPaper Pages: 246 - 251
Nonlinear conductivity and current-voltage characteristics of two-dimensional semiconductor superlattices Yu. A. RomanovE. V. Demidov OriginalPaper Pages: 252 - 254
Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation V. M. ÉmeksuzyanG. N. KamaevV. V. Bolotov OriginalPaper Pages: 255 - 260
Shubnikov-de Haas oscillations in HgSe〈Fe〉 and HgSe〈Co〉 under hydrostatic pressure É. A. Neifel’dK. M. DemchukS. Yu. Paranchich OriginalPaper Pages: 261 - 264
Thermoelectric figure of merit of monopolar semiconductors with finite dimensions V. S. ZakordonetsG. N. Logvinov OriginalPaper Pages: 265 - 267
Galvanomagnetic phenomena in p-Hg1−x MnxTe solid solutions R. I. BashirovR. R. BashirovA. Yu. Mollaev OriginalPaper Pages: 268 - 270
Lattice vibrations in CuInSe2 crystals N. N. SyrbuM. BogdanashV. E. Tezlevan OriginalPaper Pages: 271 - 275
Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure E. S. ItskevichL. M. KashirskayaV. F. Kraidenov OriginalPaper Pages: 276 - 278
Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation A. M. MyasnikovV. I. ObodnikovE. I. Cherepov OriginalPaper Pages: 279 - 282
Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te S. V. KavertsevA. E. Belyaev OriginalPaper Pages: 283 - 286
Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H A. G. Kazanskii OriginalPaper Pages: 287 - 289
Recombination mechanisms in doped n-type Hg1−x CdxTe crystals and properties of diffusion p +-n junctions based on them V. V. TeterkinS. Ya. StochanskiiF. F. Sizov OriginalPaper Pages: 290 - 293
Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures E. V. Demidov OriginalPaper Pages: 294 - 296
Auger recombination in strained quantum wells A. D. AndreevG. G. Zegrya OriginalPaper Pages: 297 - 303
Luminescence of porous silicon in the infrared spectral region at room temperature G. PolisskiiF. KochA. V. Andrianov OriginalPaper Pages: 304 - 307
Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide A. V. KalameitsevD. A. RomanovI. M. Subbotin OriginalPaper Pages: 308 - 314
Luminescence of copper-aluminum diselenide V. A. SavchukB. V. KorzunL. A. Makovetskaya OriginalPaper Pages: 315 - 318
The electrical activity of isoelectronic germanium impurities in lead chalcogenides V. F. MasterovF. S. NasredinovS. M. Irkaev OriginalPaper Pages: 319 - 320
