1. Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors: Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method, and Thermoacoustic Detection

   • E. I. Rau
   • A. V. Gostev
   • W. Wong

   OriginalPaper Pages: 207 - 218

2. Artifacts in Atomic Force Microscopy

   • R. V. Gainutdinov
   • P. A. Arutyunov

   OriginalPaper Pages: 219 - 224

3. Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies

   • V. Yu. Kireev
   • A. S. Tsimbalov

   OriginalPaper Pages: 225 - 235

4. Artificial Potential Relief in Carbon Films and Associated Heterostructures

   • V. M. Elinson

   OriginalPaper Pages: 236 - 242

5. Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel

   • V. A. Gergel'
   • V. G. Mokerov

   OriginalPaper Pages: 243 - 244

6. Model Analysis of Transients in On-Chip Interconnections

   • S. M. Zakharov

   OriginalPaper Pages: 245 - 253

7. Emitter Current Push-Out Effect under Avalanche Multiplication in the Collector p–nJunction

   • V. A. Sergeev

   OriginalPaper Pages: 254 - 257

8. On Increasing the Switching Rate in a Single-Domain Magnetooptic Cell

   • V. V. Randoshkin
   • A. M. Saletskii
   • A. Ya. Chervonenkis

   OriginalPaper Pages: 258 - 260

9. Cleaning and Doping of Silicon in a BF3Plasma during Fabrication of Ohmic Contacts

   • A. L. Danilyuk
   • Yu. P. Snitovskii

   OriginalPaper Pages: 261 - 266

10. The Effect of Electroactive Defects in the Gate Oxide on the Threshold Voltage of a Submicron MOS Transistor

    • V. Ya. Uritskii
    • A. P. Krylov

    OriginalPaper Pages: 267 - 268

11. Analysis of the Photodetector Array Spectrum Using the Influence Function

    • V. P. Fedosov

    OriginalPaper Pages: 269 - 273