Volume 19, Issue 1 supplement | Journal of Materials Science: Materials in Electronics

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Volume 19, Issue 1 supplement

December 2008

Proceedings of the 12th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-XII 2007) ; Guest Editors: Ute Zeimer and Jens W. Tomm

78 articles in this issue

DRIP-XII Conference 2007
Ute Zeimer
Jens W. Tomm
Mike R. Brozel
Preface 20 March 2008 Pages: 1 - 3
Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon
K. Ramspeck
K. Bothe
R. Brendel
OriginalPaper 11 March 2008 Pages: 4 - 8
Infrared light emission from porous silicon
Guobin Jia
Winfried Seifert
Martin Kittler
OriginalPaper 20 January 2008 Pages: 9 - 13
Lithium-drifted, silicon radiation detectors for harsh radiation environments
J. Grant
C. Buttar
H. Menari
OriginalPaper 09 April 2008 Pages: 14 - 18
Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements
Hiroshi Yamada-Kaneta
Terutaka Goto
Shintaro Nakamura
OriginalPaper 13 May 2008 Pages: 19 - 23
On the characterisation of grown-in defects in Czochralski-grown Si and Ge
J. Vanhellemont
J. Van Steenbergen
I. Romandic
OriginalPaper 05 February 2008 Pages: 24 - 31
Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon
Weiyan Wang
Deren Yang
Duanlin Que
OriginalPaper 05 February 2008 Pages: 32 - 35
Radially non-uniform interaction of nitrogen with silicon wafers
V. Akhmetov
G. Kissinger
M. Kittler
OriginalPaper 04 March 2008 Pages: 36 - 40
Gettering of iron in silicon by boron implantation
A. Haarahiltunen
H. Talvitie
J. Sinkkonen
OriginalPaper 23 February 2008 Pages: 41 - 45
Microstructure of a-plane (\(2\bar{1}\bar{1}0\)) GaN ELOG stripe patterns with different in-plane orientation
Tim Wernicke
Ute Zeimer
Gert Irmer
OriginalPaper 11 March 2008 Pages: 46 - 50
Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
G. Irmer
T. Brumme
M. Weyers
OriginalPaper 20 January 2008 Pages: 51 - 57
Cathodoluminescence study of GaN-based film structures
D. S. Jiang
U. Jahn
K. Ploog
OriginalPaper 20 January 2008 Pages: 58 - 63
Irradiation effects on AlGaN HFET devices and GaN layers
Sonia Gnanapragasam
Eberhard Richter
Günther Tränkle
OriginalPaper 05 February 2008 Pages: 64 - 67
Study of in-depth strain variation in ion-irradiated GaN
Martin Herms
Ute Zeimer
Jörg Opitz-Coutureau
OriginalPaper 29 December 2007 Pages: 68 - 72
Band offset diagnostics of advanced dielectrics
Piotr Edelman
Marshall Wilson
Jacek Lagowski
OriginalPaper 19 January 2008 Pages: 73 - 78
Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
T. Hahn
S. Schmerler
B. Gruendig-Wendrock
OriginalPaper 19 February 2008 Pages: 79 - 82
Photoelastic strain measurement in GaP (100) wafers under external stresses
M. Fukuzawa
M. Yamada
OriginalPaper 05 March 2008 Pages: 83 - 86
Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes
Cédric Renaud
Yves Josse
Thien-Phap Nguyen
OriginalPaper 23 February 2008 Pages: 87 - 91
Effect of electrical operation on the defect states in organic semiconductors
Thien Phap Nguyen
Cédric Renaud
Chain-Shu Hsu
OriginalPaper 24 March 2008 Pages: 92 - 95
Defects in nanostructures with ripened InAs/GaAs quantum dots
L. Nasi
C. Bocchi
S. Franchi
OriginalPaper 11 March 2008 Pages: 96 - 100
Thermal instability of electron traps in InAs/GaAs quantum dot structures
M. Kaniewska
O. Engström
G. Zaremba
OriginalPaper 03 April 2008 Pages: 101 - 106
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method
C. Frigeri
G. Attolini
F. Germini
OriginalPaper 23 January 2008 Pages: 107 - 110
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures
Tadeusz Wosinski
Tadeusz Figielski
Janusz Sadowski
OriginalPaper 05 February 2008 Pages: 111 - 114
Point defects in SiGe alloys: structural guessing based on electronic transition analysis
A. Mesli
P. Kruszewski
N. V. Abrosimov
OriginalPaper 11 December 2007 Pages: 115 - 121
Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopy
Atsushi Ogura
Yasuto Kakemura
Naoya Yamamoto
OriginalPaper 05 March 2008 Pages: 122 - 126
Ultra high-speed characterization of multicrystalline Si wafers by photoluminescence imaging with HF immersion
H. Sugimoto
M. Tajima
OriginalPaper 12 February 2008 Pages: 127 - 131
Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers
M. Inoue
H. Sugimoto
A. Ogura
OriginalPaper 12 February 2008 Pages: 132 - 134
Laser-induced defect creation in 300 mm SOI-wafer analyzed by use of photoelastic imaging
Kristian Schulz
Hans D. Geiler
Marc Herden
OriginalPaper 19 February 2008 Pages: 135 - 139
Study of the degradation of AlGaAs-based high-power laser bars: V defects
A. Martín-Martín
M. Avella
J. Nagle
OriginalPaper 07 December 2007 Pages: 140 - 144
Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies
Stephen Bull
Jens W. Tomm
Eric C. Larkins
OriginalPaper 25 January 2008 Pages: 145 - 149
Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance
Dorota Pierścińska
Anna Kozlowska
Fritz Weik
OriginalPaper 04 March 2008 Pages: 150 - 154
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage
Marwan Bou Sanayeh
Peter Brick
Gerd Bacher
OriginalPaper 27 November 2007 Pages: 155 - 159
Degradation model analysis of laser diodes
K. Häusler
U. Zeimer
G. Tränkle
OriginalPaper 08 January 2008 Pages: 160 - 164
Spatial variations of carrier and defect concentration in VGF GaAs:Si
Martina Baeumler
Frank Börner
Joachim Wagner
OriginalPaper 29 December 2007 Pages: 165 - 170
Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study
Manuel Avella
Juan Jiménez
Ahmed Rhallabi
OriginalPaper 20 January 2008 Pages: 171 - 175
SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Lutz Kirste
Klaus Köhler
Joachim Wagner
OriginalPaper 14 December 2007 Pages: 176 - 181
The evolution of the ion implantation damage in device processing
M. L. Polignano
I. Mica
G. Spoldi
OriginalPaper 21 February 2008 Pages: 182 - 188
Characterization of strained Si wafers by X-ray diffraction techniques
Takayoshi Shimura
Kohta Kawamura
Masataka Umeno
OriginalPaper 29 February 2008 Pages: 189 - 193
Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy
Paul Montgomery
Freddy Anstotz
Renaud Kiefer
OriginalPaper 05 December 2007 Pages: 194 - 198
In situ X-ray diffraction study of epitaxial growth of ordered Fe₃Si films
B. Jenichen
V. M. Kaganer
J. Herfort
OriginalPaper 29 December 2007 Pages: 199 - 202
Influence of defects in opal photonic crystals on the optical transmission imaged by near-field scanning optical microscopy
K. Bittkau
R. Carius
R. B. Wehrspohn
OriginalPaper 24 March 2008 Pages: 203 - 207
The origin and reduction of dislocations in Gallium Nitride
R. A. Oliver
M. J. Kappers
C. J. Humphreys
OriginalPaper 05 March 2008 Pages: 208 - 214
Initial process effects on the surface morphology and structural property of the AlN epilayers
Xiaohong Chen
Shuping Li
Junyong Kang
OriginalPaper 20 March 2008 Pages: 215 - 218
Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film
Bin Chen
Jun Chen
Hajime Okumura
OriginalPaper 19 February 2008 Pages: 219 - 223
High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC
Paweł Kamiński
Roman Kozłowski
Mariusz Pawłowski
OriginalPaper 26 January 2008 Pages: 224 - 228
Electronic structures of ZnO(0001)-Zn and (000−1)-O polar surfaces
Changjie Zhou
Junyong Kang
OriginalPaper 19 January 2008 Pages: 229 - 233
Evaluation of photoelectrical properties of Bi doped CdTe crystals
A. Kadys
K. Jarasiunas
D. Verstraeten
OriginalPaper 24 March 2008 Pages: 234 - 238
Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methods
A. V. Frantskevich
A. M. Saad
A. A. Patryn
OriginalPaper 05 March 2008 Pages: 239 - 242
Dislocation-related photoluminescence from processed Si
Andrzej Misiuk
Konstantin S. Zhuravlev
Edward A. Steinman
OriginalPaper 11 December 2007 Pages: 243 - 247
Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states
M. A. Abdi
F. Djeffal
M. L. Hafiane
OriginalPaper 29 December 2007 Pages: 248 - 253