Impact of high energy particle irradiation on the electrical performance of Si1−x Ge x epitaxial diodes H. OhyamaK. HayamaH. Sunaga OriginalPaper Pages: 335 - 337
Point defect redistribution in Si1−x Ge x alloys A. D. N. PaineA. F. W. WilloughbyJ. M. Bonar OriginalPaper Pages: 339 - 343
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy J. M. BonarJ. SchizP. Ashburn OriginalPaper Pages: 345 - 349
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy P. J. McnallyJ. W. CurleyI. DeWolf OriginalPaper Pages: 351 - 358
Non-equilibrium thermodynamic analysis on the behaviour of point defects in growing silicon crystals: effects of stress K. TanahashiN. Inoue OriginalPaper Pages: 359 - 363
Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization A. MatsumuraK. KawamuraY. Nagatake OriginalPaper Pages: 365 - 371
Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication S. Duen~asR. Pela´ezG. Gonza´lez-Di´az OriginalPaper Pages: 373 - 377
Use of anodic tantalum pentoxide for high-density capacitor fabrication S. Duen~asE. Casta´nP. A. Sullivan OriginalPaper Pages: 379 - 384
Ion beam synthesis of compound nanoparticles in SiO2 A. Pe´rez-Rodri´guezB. GarridoR. Rodri´guez OriginalPaper Pages: 385 - 391
Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma M. J. Herna´ndezM. CerveraJ. Piqueras OriginalPaper Pages: 393 - 398
Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers M. HammadiJ. C. BourgoinH. Samic OriginalPaper Pages: 399 - 402
Radiation damage of In0.53Ga0.47As photodiodes by high energy particles H. OhyamT. KudouH. Sunaga OriginalPaper Pages: 403 - 405
Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere C. PizzutoG. ZolloG. Vitali OriginalPaper Pages: 407 - 411
Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions L. QuintanillaS. Duen~asJ. Barbolla OriginalPaper Pages: 413 - 418
Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs B. GeorgescuA. SouifiG. Post OriginalPaper Pages: 419 - 423
Electrical characterization of Si+ and Si+/P+ implanted N+P+In0.53Ga0.47As junctions M. N. BlancoE. RedondoG. Gonza´lez-Diaz OriginalPaper Pages: 425 - 428
Recent developments in the design and fabrication of visible photonic band gap waveguide devices M. D. B. CharltonG. J. ParkerM. E. Zoorob OriginalPaper Pages: 429 - 440
Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells I. M. DharmadasaA. P. SamantillekeA. Wolska OriginalPaper Pages: 441 - 445
Tunable microcavity based on InP/air Bragg mirrors R. LE DantecT. BenyattouR. Blondeau OriginalPaper Pages: 447 - 450
Active media for optical data processing in optoelectronic devices G. Vāle OriginalPaper Pages: 451 - 454
High dielectric AlN/Al2O3 composite powder using a plasma spray approach for microelectronics application F. Y. C. BoeyL. SunK. A. Khor OriginalPaper Pages: 455 - 459
Effects of strain rate and temperature on the stress–strain response of solder alloys W. J. PlumbridgeC. R. Gagg OriginalPaper Pages: 461 - 468