Skip to main content
SpringerLink
Log in

High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

  • Letters
  • Published:
Journal of the Korean Physical Society Aims and scope Submit manuscript

Abstract

Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

References

  1. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti and A. Kis, Nat. Nanotechnol. 6, 147 (2011).

    Article  ADS  Google Scholar 

  2. B. Radisavljevic, M. B. Whitwick and A. Kis, ACS Nano 5, 9934 (2011).

    Article  Google Scholar 

  3. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012).

    Article  ADS  Google Scholar 

  4. J. S. Ross et al., Nat. Nanotechnol. 9, 268 (2014).

    Article  ADS  Google Scholar 

  5. L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen and Y. Zhang, Nat. Nanotechnol. 9, 372 (2014).

    Article  ADS  Google Scholar 

  6. H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tomanek and P. D. Ye, ACS Nano 8, 4033 (2014).

    Article  Google Scholar 

  7. P. J. Jeon et al., J. Mater. Chem. C 3, 2751 (2015).

    Article  Google Scholar 

  8. A. Pospischil, M. M. Furchi and T. Mueller, Nat. Nanotechnol. 9, 257 (2014).

    Article  ADS  Google Scholar 

  9. S. Das and J. Appenzeller, Appl. Phys. Lett. 103, 103501 (2013).

    Article  ADS  Google Scholar 

  10. H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi and A. Javey, Nano Lett. 12, 3788 (2012).

    Article  ADS  Google Scholar 

  11. H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu and S. Im, Nano Lett. 12, 3695 (2012).

    Article  ADS  Google Scholar 

  12. B. Radisavljevic and A. Kis, Nat. Mater. 12, 815 (2013).

    Article  ADS  Google Scholar 

  13. S. Kim et al., Nat. Commun. 3, 1011 (2012).

    Article  ADS  Google Scholar 

  14. W. Choi et al., Adv. Mater. 24, 5832 (2012).

    Article  Google Scholar 

  15. B. Radisavljevic, M. B. Whitwick and A. Kis, Appl. Phys. Lett. 101, 043103 (2012).

    Article  ADS  Google Scholar 

  16. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic and A. Kis, Nat. Nanotechnol. 8, 497 (2013).

    Article  ADS  Google Scholar 

  17. S. Das, H.-Y. Chen, A. V. Penumatcha and J. Appenzeller, Nano Lett. 13, 100 (2013).

    Article  ADS  Google Scholar 

  18. Y. T. Lee, K. Choi, H. S. Lee, S.-W. Min, P. J. Jeon, D. K. Hwang, H. J. Choi and S. Im, Small 10, 2356 (2014).

    Article  Google Scholar 

  19. Y. T. Lee, P. J. Jeon, K. H. Lee, R. Ha, H. J. Choi and S. Im, Adv. Mater. 24, 3020 (2012).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea

    Young Tack Lee & Do Kyung Hwang

  2. Institute of Physics and Applied Physics, Yonsei University, Seoul, 03722, Korea

    Seongil Im

Authors
  1. Young Tack Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Do Kyung Hwang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Seongil Im
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Do Kyung Hwang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lee, Y.T., Hwang, D.K. & Im, S. High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode. Journal of the Korean Physical Society 67, 1499–1503 (2015). https://doi.org/10.3938/jkps.67.1499

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3938/jkps.67.1499

Keywords

Search

Navigation