Abstract
Dielectric functions as analytic functions of temperature are useful for nondestructive in-situ monitoring of material deposition and for device design. We present an analytic expression that accurately represents the dielectric function ɛ = ɛ 1 + iɛ 2 of InSb at energies from 0.74 to 6.42 eV for temperatures from 31 to 675 K. The original e spectra were obtained by using rotating-compensator spectroscopic ellipsometry. We used the parametric model (PM), which can accommodate the asymmetric nature of critical-point features. The InSb data are successfully reconstructed with nine PM components and yield e as a continuous function of both energy and temperature within the limits given above. Our results should be useful in a number of contexts, including device design and in-situ monitoring of deposition. A representative deposition example is discussed.
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Refrerences
D. E. Aspnes and A. A. Studna, Appl. Opt. 14, 220 (1975).
K. J. Kim and J. W. Heo, J. Korean Phys. Soc. 60, 1376 (2012).
J. W. Ryu, S. Y. Kim and Y. K. Kim, J. Korean Phys. Soc. 57, 233 (2010).
H. Lee, H. Lee, J. A. Hur, M. J. Cho, D. H. Choi and T. D. Kang, J. Korean Phys. Soc. 62, 930 (2013).
I. An, J. Nanophotonics 4, 040302 (2010).
J. H. Gruenewald, J. Nichols and S. S. A. Seo, Rev. Sci. Instrum. 84, 043902 (2013).
S. Dardona and M. Jaworowski, Appl. Phys. Lett. 97, 181908 (2010).
D. E. Aspnes, W. E. Quinn, M. C. Tamargo, M. A. A. Pudensi, S. A. Schwarz, M. J. S. P. Brasil, R. E. Nahory and S. Gregory, Appl. Phys. Lett. 60, 1244 (1992).
A. Canillas, E. Bertran, J. L. Andújar and B. Drévillon, J. Appl. Phys. 68, 2752 (1990).
S. V. Ivanov et al., Appl. Phys. Lett. 82, 3782 (2003).
Y.-S. Park, E. J. Kang and J. S. Lee, J. Korean Phys. Soc. 64, 263 (2014).
P. J. Carrington, V. A. Solov’ev, Q. Zhuang, A. Krier and S. V. Ivanov, Appl. Phys. Lett. 93, 091101 (2008).
R. Intartaglia et al., J. Appl. Phys. 103, 114516 (2008).
Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, Y. J. Kwon and J. E. Oh, J. Cryst. Growth 296, 75 (2006).
Y. Qiu, D. Uhl and S. Keo, Appl. Phys. Lett. 84, 263 (2004).
D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
S. Imai and S. Adachi, Jpn. J. Appl. Phys. 32, 3860 (1993).
S. Logothetidis, L. Viña and M. Cardona, Phys. Rev. B 31, 947 (1985).
T. J. Kim, S. Y. Hwang, J. S. Byun, M. S. Diware, J. Choi, H. G. Park and Y. D. Kim, J. Appl. Phys. 114, 103501 (2013).
M. Cardona, in Solid State Physics, edited by F. Seitz, D. Turnbull and H. Ehrenreich (Academic, New York, 1969), Supplement, Vol. 11.
B. Johs, C. M. Herzinger, J. H. Dinan, A. Cornfeld and J. D. Benson, Thin Solid Films 313, 137 (1998).
C. M. Herzinger and B. D. Johs, U.S. Patent No. 5,796,983 (14 August 1995).
T. J. Kim, T. H. Ghong, Y. D. Kim, S. J. Kim, D. E. Aspnes, T. Mori, T. Yao and B. H. Koo, Phys. Rev. B 68, 115323 (2003).
Y. W. Jung, T. J. Kim, J. J. Yoon, Y. D. Kim and D. E. Aspnes, J. Appl. Phys. 104, 013515 (2008).
T. J. Kim, S. Y. Hwang, J. S. Byun, M. S. Diware, J. Y. Kim and Y. D. Kim, J. Korean Phys. Soc. 61, 1821 (2012).
F. Lukes, Proceedings of the Sixth International Conference on the Physics of Semiconductors, Exeter (The Institute of Physics and the Physical Society, London, 1962), p. 389.
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Kim, T.J., Byun, J.S., Choi, J. et al. Analytic determination of the dielectric function of InSb at energies from 0.74 to 6.42 eV at temperatures from 31 to 675 K. Journal of the Korean Physical Society 64, 1872–1877 (2014). https://doi.org/10.3938/jkps.64.1872
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DOI: https://doi.org/10.3938/jkps.64.1872