Abstract
The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.
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Le, T., Tran, H.C.S., Van Le, H. et al. Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure. Journal of the Korean Physical Society 60, 1087–1091 (2012). https://doi.org/10.3938/jkps.60.1087
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DOI: https://doi.org/10.3938/jkps.60.1087