Abstract
Kinetics of accumulation of oxygen–vacancy complexes, which is the dominant radiation-induced structural defect in the monocrystalline n-type Czochralski (Cz) silicon was studied experimentally and theoretically for silicon samples irradiated with electron beam pulses of various intensities and energies at 360 °C. The irradiation intensity was shown to have no effect on oxygen–vacancy complexes formation at temperatures when the complexes were unstable, but the complexes annealing efficiency revealed significant dependence on the electron beam intensity. In contrast, the electron beam energy affected the formation rate of vacancies themselves and their complexes with oxygen, but it did not influence annealing properties of oxygen–vacancy complexes. It occurred that the complexes generated in silicon at room temperature could be annealed at 360 °C much faster if irradiated with the electron beam during annealing. The results suggested an important role of radiation-induced ionization of a silicon crystal in transformation of oxygen–vacancy complexes into even more loaded complexes.
Graphical Abstract
Similar content being viewed by others
Data availability
The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request. Most of the data generated or analyzed during this study are included in the published article.
References
J.-G. Xu, F. Lu, H.-H. Sun, Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation. Phys. Rev. B 38, 3395 (1988)
J. Lalita, B.G. Svensson, C. Jagadish, Point-defects observed in crystalline silicon implanted by Mev si ions at elevated-temperatures. Nucl. Instrum. Methods Phys. Res. 96(1–2), 210 (1995). https://doi.org/10.1016/0168-583X(94)00484-6
V.B. Neimash, M.M. Kras’ko, A.M. Kraitchinskii, Generation of radiation and thermal defects in silicon during hot electron irradiation. Ukrayins’kij Fyizichnij Zhurnal (Kiev) 47(1), 50 (2002)
J.L. Lindström, L.I. Murin, T. Hallberg, V.P. Markevich, B.G. Svensson, M. Kleverman, J. Hermansson, Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nucl. Instrum. Methods Phys. Rev. B 186, 121 (2002)
E. Simoen, J.M. Rafi, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras’ko, V. Tishchenko, V. Voytovych, J. Versluys, P. Clauws, Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon. Jpn. J. Appl. Phys. 42, 7184 (2003)
E. Simoen, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras’ko, V. Tishchenko, V. Voytovych, A deep level study of high-temperature electron-irradiated n-type silicon. Solid State Phenom. 95–96, 367 (2004)
V. Neimash, M. Kras’ko, A. Kraitchinskii, V. Voytovych, V. Tishchenko, E. Simoen, J.M. Rafi, C. Claeys, J. Versluys, O. De Gryse, P. Clauws, DLTS studies of high-temperature electron irradiated Cz n-Si. Phys. Stat. Sol. (a) 201, 509 (2004)
V.P. Markevich, A.R. Peaker, S.B. Lastovskii, V.E. Gusakov, I.F. Medvedeva, L.I. Murin, Formation of radiation-induced defects in Si crystals irradiated with electrons at elevated temperatures. Solid State Phenom. 156–158, 299 (2010)
D.C. Schmidt, B.G. Svensson, J.L. Lindström, S. Godey, E. Ntsoenzok, J.F. Barbot, C. Blanchard, 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects. J. Appl. Phys. 85, 3556 (1999)
H. Ohyama, K. Takakura, H. Matsuoka, T. Jono, E. Simoen, C. Claeys, J. Uemura, T. Kishikawa, Radiation damage induced in Si photodiodes by high-temperature neutron irradiation. J. Mater. Sci. Mater. Electron. 14, 437 (2003)
H. Ohyama, K. Hayama, K. Takakura, T. Miura, K. Shigaki, T. Jono, E. Simoen, A. Poyai, C. Claeys, Influence of irradiation temperature on electron-irradiated STI Si diodes. J. Mater. Sci. Mater. Electron. 14, 451 (2003)
M. Nakabayashi, H. Ohyama, N. Hanano, E. Simoen, C. Claeys, K. Takakura, T. Iwata, T. Kudou, M. Yoneoka, Effects of high temperature electron irradiation on trench-IGBT. J. Mater. Sci. Mater. Electron. 16, 463 (2005)
V. Quemener, B. Raeissi, F. Herklotz, L.I. Murin, E.V. Monakhov, B.G. Svensson, Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment. J. Appl. Phys. 118, 135703 (2015)
G.D. Watkins, J.W. Corbett, Defects in irradiated silicon. I. Electron spin resonance of the Si-A center. Phys. Rev. 121, 1001 (1961)
E. Sonder, L.C. Templeton, Gamma irradiation of silicon. I. Levels in n-type material containing oxygen. J. Appl. Phys. 31, 1279 (1960)
L.F. Makarenko, Re-evaluation of energy levels of oxygen–vacancy complex in n-type silicon crystals: I. Weak compensation. Semicond. Sci. Technol. 16(7), 619 (2001)
V.B. Neimash, V.V. Voitovych, M.M. Kras’ko, A.M. Kraitchinskii, O.M. Kabaldin, Y.V. Pavlovs’kyi, V.M. Tsmots, Formation of radiation-induced defects in n-Si with lead and carbon impurities. Ukrayins’kij Fyizichnij Zhurnal (Kiev) 11, 1273 (2005)
S.D. Brotherton, P. Bradley, Defect production and lifetime control in electron and irradiated silicon. J. Appl. Phys. 53, 5720 (1982)
M. Kras’ko, A. Kolosiuk, V. Voitovych, V. Povarchuk, Lifetime control in irradiated and annealed Cz n-Si: Role of divacancy-oxygen defects. Phys. Stat. Sol. (a) 216, 1900290 (2019)
S. Jin, P. Wang, Y. Qin, C. Cui, D. Yang, X. Yu, Effects of vacancy defects on the mechanical properties in neutron irradiated Czochralski silicon. J. Phys. Condens. Matter. 32, 275702 (2020)
J.L. Lindström, L.I. Murin, V.P. Markevich, T. Hallberg, B.G. Svensson, Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon. Physica B 273–274, 291 (1999)
J.W. Corbett, G.D. Watkins, R.S. McDonald, New oxygen infrared bands in annealed irradiated silicon. Phys. Rev. 135, A1381 (1964)
X. Yu, L. Chen, P. Cheng, D. Yang, Quantitative study of the evolution of oxygen and vacancy complexes in Czochralski silicon. Appl. Phys. Express 5, 021302 (2012)
B.G. Svensson, J.L. Lindström, Kinetic study of the 830- and 889-cm-1 infrared bands during annealing of irradiated silicon. Phys. Rev. B 34, 8709 (1986)
L.I. Murin, J.L. Lindström, B.G. Svensson, V.P. Markevich, A.R. Peaker, C.A. Londos, VOn (n ≥ 3) defects in irradiated and heat-treated silicon. Solid State Phenom. 108–109, 267 (2005)
V.V. Voronkov, R. Falster, C.A. Londos, The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon. J. Appl. Phys. 111, 113530 (2012)
A. Chroneos, E.N. Sgourou, C.A. Londos, U. Schwingenschlögl, Oxygen defect processes in silicon and silicon germanium. Appl. Phys. Rev. 2, 021306 (2015)
A. Abdurrazaq, A.T. Raji, W.E. Meyer, Effect of isovalent doping on hydrogen passivated vacancy-oxygen defect complexes in silicon: Insights from density functional theory. Silicon (2020). https://doi.org/10.1007/s12633-020-00548-5
L.I. Murin, E.A. Tolkacheva, S.B. Lastovskii, V.P. Markevich, J. Mullins, A.R. Peaker, B.G. Svensson, Interaction of radiation-induced self-interstitials with vacancy-oxygen related defects VnO2 (n from 1 to 3) in silicon. Phys. Stat. Sol. (a) 216(10), 1800609 (2019)
P. Dong, X. Yu, L. Chen, X. Ma, D. Yang, Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon. J. Appl. Phys. 122, 095704 (2017)
P. Dong, P. Yang, M. Xie, Studies of annealing of point defects and their influence on the electrical degradation and recovery behaviors of heavily neutron irradiated silicon. Radiat. Eff. Defects Solids 173, 1018 (2018)
Y. Qin, P. Wang, S. Jin, C. Cui, D. Yang, X. Yu, Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon. Mater. Sci Semicond. Process 98, 65 (2019)
A. Kraitchinskii, A. Kolosiuk, M. Kras’ko, V. Neimash, V. Voitovych, V. Makara, R. Petrunya, S. Putselyk, Vacancy generation in silicon in the temperature range 100–633 K under electron irradiation. Radiat. Eff. Defects Solids 166, 445 (2011)
M. Krasko, A. Kraitchinskii, A. Kolosiuk, V. Neimash, V. Voitovych, V. Makara, R. Petrunya, V. Povarchuk, Accumulation of VO defects in n-Si at high-temperature pulse electron irradiation: generation and annealing kinetics, dependence on irradiation intensity. Solid State Phenom. 178–179, 404 (2011)
J.C. Bourgoin, J.W. Corbett, H.L. Frisch, Ionization enhanced diffusion. J. Chem. Phys. 59, 4042 (1973)
J.C. Bourgoin, J.W. Corbett, A new mechanism for interstitial migration. Phys. Lett. 38A, 135 (1972)
R. Radu, I. Pintilie, L.C. Nistor, E. Fretwurst, G. Lindstroem, L.F. Makarenko, Investigation of point and extended defects in electron irradiated silicon—dependence on the particle energy. J. Appl. Phys. 117, 164503 (2015)
S. Banerjee, A. Caner, S. Dutta, A. Khanov, F. Palla, G. Tonelli, Study of dE/dx measurements with the CMS tracker, CMS note 1999/056, October 22, 1999.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no conflict of interest.
Supplementary Information
Below is the link to the electronic supplementary material.
Rights and permissions
About this article
Cite this article
Kras’ko, M.M., Kolosiuk, A.G., Neimash, V.B. et al. Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si. Journal of Materials Research 36, 1646–1656 (2021). https://doi.org/10.1557/s43578-021-00152-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/s43578-021-00152-2