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Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance

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Abstract

Improving the DC and RF characteristics of field-effect devices by simple changes in basic structure is an advantageous electronics research topic which has been more considered in recent years. Mixture of SOI and MES technology with FETs results in SOI-MESFETs with proper electrical characteristics. Here, by changes in basic form of these devices, an efficient structure is introduced which shows enhanced DC and RF specifications. A shift in gate metal from middle of device toward the source region and using a nickel layer inside the drift region are the changes compared to the basic device which are applied to manage the electric field and parasitic capacitances. The resultant device is evaluated in terms of maximum output power density, cutoff frequency, breakdown voltage, maximum oscillation frequency, and stable gains. Simulations show that the proposed device outperforms the conventional structure for evaluated criteria.

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Authors and Affiliations

  1. Electrical Engineering Department, Energy faculty, Kermanshah University of Technology, Kermanshah city, Iran

    Ali Naderi & Hamed Mohammadi

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  1. Ali Naderi
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  2. Hamed Mohammadi
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Correspondence to Ali Naderi.

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Naderi, A., Mohammadi, H. Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance. Eur. Phys. J. Plus 136, 662 (2021). https://doi.org/10.1140/epjp/s13360-021-01661-z

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  • DOI: https://doi.org/10.1140/epjp/s13360-021-01661-z

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