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Advances in wide bandgap SiC for optoelectronics

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Abstract

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

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Author information

Author notes

  1. Yiyu Ou

    Present address: Light extraction ApS, Diplomvej 373, 2800, Lyngby, Denmark

  2. Jianwu Sun

    Present address: IMEC, Kapeldreef 75, 3001, Leuven, Belgium

Authors and Affiliations

  1. Department of Photonics Engineering, Technical University of Denmark, 2800, Lyngby, Denmark

    Haiyan Ou, Yiyu Ou & Aikaterini Argyraki

  2. Materials of Electronics Energy Technology, University of Erlangen-Nuremberg, 91058, Erlangen, Germany

    Saskia Schimmel, Michl Kaiser & Peter Wellmann

  3. School of Information and Communication Technology, KTH Royal Institute of Technology, 16440, Kista, Sweden

    Margareta K. Linnarsson

  4. Department of Physics, Chemistry and Biology, Linköping University, 58183, Linköping, Sweden

    Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl & Mikael Syväjärvi

Authors
  1. Haiyan Ou
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  2. Yiyu Ou
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  8. Valdas Jokubavicius
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Correspondence to Haiyan Ou.

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Ou, H., Ou, Y., Argyraki, A. et al. Advances in wide bandgap SiC for optoelectronics. Eur. Phys. J. B 87, 58 (2014). https://doi.org/10.1140/epjb/e2014-41100-0

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  • DOI: https://doi.org/10.1140/epjb/e2014-41100-0

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