Abstract
Laser dependence of binding energy on exciton in a GaAs quantum well wire embedded on an AlGaAs wire within the single band effective mass approximation is investigated. Laser dressed donor binding energy is calculated as a function of wire radius with the renormalization of the semiconductor gap and conduction valence effective masses. We take into account the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. The spatial dielectric function and the polaronic effects have been employed in a GaAs/AlGaAs quantum wire. The numerical calculations reveal that the binding energy is found to increase with decrease with the wire radius, and decrease with increase with the value of laser field amplitude, the polaronic effect enhances the binding energy considerably and the binding energy of the impurity for the narrow well wire is more sensitive to the laser field amplitude.
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Santhi, M., John Peter, A. Intense field effects on shallow donor impurities in a quantum wire. Eur. Phys. J. B 71, 225–231 (2009). https://doi.org/10.1140/epjb/e2009-00288-x
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DOI: https://doi.org/10.1140/epjb/e2009-00288-x