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Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields

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Abstract

This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary, this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance ratio in both stacked graphene ribbons are proportional to the square of the magnetic field.

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Authors and Affiliations

  1. Department of Applied Physics, National University of Kaohsiung, Kaohsiung, 811, Taiwan

    Shih-Jye Sun

  2. Center for General Education, Tainan University of Technology, 710, Tainan, Taiwan

    C. P. Chang

Authors
  1. Shih-Jye Sun
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  2. C. P. Chang
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Sun, SJ., Chang, C.P. Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields. Eur. Phys. J. B 64, 249–255 (2008). https://doi.org/10.1140/epjb/e2008-00309-4

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  • DOI: https://doi.org/10.1140/epjb/e2008-00309-4

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