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Hydrodynamic simulation of electron transport in n-type Hg0.8Cd0.2Te

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Abstract.

A hydrodynamic approach based on concentration, velocity and energy conservation equations is developed and used for the simulation of the electron transport in bulk HgCdTe. Both transient and steady-state regimes are simulated using input parameters calculated with a Monte Carlo simulator. The model is validated through a comparison in excellent agreement with Monte Carlo results.

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Authors and Affiliations

  1. Laboratory of semiconductor devices physics, University of Béchar, P.O. Box N°417, Béchar, 08000, Algeria

    M. Daoudi & A. Belghachi

  2. Institut d'Électronique du Sud, UMR CNRS 5214, Université Montpellier II, c.c.084, place Bataillon, 34095, Montpellier Cedex 5, France

    L. Varani & C. Palermo

Authors
  1. M. Daoudi
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  2. A. Belghachi
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  3. L. Varani
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  4. C. Palermo
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Correspondence to M. Daoudi.

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Daoudi, M., Belghachi, A., Varani, L. et al. Hydrodynamic simulation of electron transport in n-type Hg0.8Cd0.2Te. Eur. Phys. J. B 62, 15–18 (2008). https://doi.org/10.1140/epjb/e2008-00111-4

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  • DOI: https://doi.org/10.1140/epjb/e2008-00111-4

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