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Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure

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Abstract.

A variational approach is used to study the surface states of electrons in a semi-infinite polar semiconductor under hydrostatic pressure. The effective Hamiltonian and the surface-state levels are derived including the effects of electron-optical phonon interaction and pressure. The numerical computation has been performed for the surface-state energies versus pressure for zinc-blende GaN, AlN, and InN. The results show that the effect of electron-optical phonon interaction lowers the surface-state energy. It is also found that the effect of electron-surface optical phonon interaction is much bigger than the effect of electron-half space longitudinal optical phonon interaction for surface-state levels. It indicates that the surface-state energies and the influence of electron-phonon interaction increase with pressure obviously.

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Authors and Affiliations

  1. CCAST (World Laboratory), P.O. Box 8730, 100080, Beijing, P.R. China

    Z. W. Yan, S. L. Ban & X. X. Liang

  2. Department of Physics, Inner Mongolia University, 010021, Hohhot, P.R. China

    Z. W. Yan, S. L. Ban & X. X. Liang

  3. Department of Basic Sciences, Inner Mongolia Agricultural University, 010018, Hohhot, P.R. China

    Z. W. Yan

Authors
  1. Z. W. Yan
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  2. S. L. Ban
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  3. X. X. Liang
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Correspondence to Z. W. Yan.

Additional information

Received: 12 June 2003, Published online: 22 September 2003

PACS:

63.20.Kr Phonon electron and phonon-phonon interactions - 71.38.-k Polarons and electron-phonon interactions - 73.20.At Surface states, band structure, electron density of states

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Yan, Z.W., Ban, S.L. & Liang, X.X. Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure. Eur. Phys. J. B 35, 41–47 (2003). https://doi.org/10.1140/epjb/e2003-00254-8

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