Density matrix theory of population inversion in biased semiconductor superlattices

Abstract:

The field-induced carrier redistribution between the subbands of a semiconductor superlattice is treated using the density matrix approach. The unit cell of the superlattice consists of one quantum well with three occupied subbands. Carrier scattering on polar-optical phonons is described within the microscopic bulk phonon model. At the tunneling resonance, an intrinsic population inversion is observed. The temperature dependence of the population inversion is determined.