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Precise half-life measurement of the 26Si ground state

  • Regular Article — Experimental Physics
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An Erratum to this article was published on 12 November 2008

Abstract

The β-decay half-life of 26Si was measured with a relative precision of 1.4·10−3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision of 3%. The experiment was done at the Accelerator Laboratory of the University of Jyväskylä where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.

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Correspondence to I. Matea.

Additional information

Communicated by D. Guerreau

An erratum to this article is available at http://dx.doi.org/10.1140/epja/i2008-10678-2.

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Matea, I., Souin, J., Äystö, J. et al. Precise half-life measurement of the 26Si ground state. Eur. Phys. J. A 37, 151–158 (2008). https://doi.org/10.1140/epja/i2008-10623-5

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  • DOI: https://doi.org/10.1140/epja/i2008-10623-5

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